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GS61004B-E01-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 45A RdsOn-Drain-SourceResistance: 15mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 6.2nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems FallTime: - ForwardTransconductance-Min: - Height: 0.52mm Length: 4.55mm MoistureSensitive: Yes Pd-PowerDissipation: - Product: MOSFET RiseTime: - Series: GS61004 FactoryPackQuantity: 100 TransistorType: 1N-Channel Type: GaNTransistor TypicalTurn-OffDelayTime: - TypicalTurn-OnDelayTime: - Width: 4.35mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 100V Id-ContinuousDrainCurrent: 45A RdsOn-Drain-SourceResistance: 15mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 6.2nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Tray Brand: GaNSystems FallTime: - ForwardTransconductance-Min: - Height: 0.52mm Length: 4.55mm MoistureSensitive: Yes Pd-PowerDissipation: - Product: MOSFET RiseTime: - Series: GS61004 FactoryPackQuantity: 100 TransistorType: 1N-Channel Type: GaNTransistor TypicalTurn-OffDelayTime: - TypicalTurn-OnDelayTime: - Width: 4.35mm
GSP65MB-EVB
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento IC de gestão de alimentação
描述: Ferramentas de desenvolvimento IC de gestão de alimentação Full Bridge Eval Platform Mother Brd
Categoriadeproduto: FerramentasdedesenvolvimentoICdegestãodealimentação Fabricante: GaNSystems Produto: EvaluationBoards Tipo: GateDrivers Ferramentaparaavaliaçãode: GSP65MB Tensãodeentrada: 5V,12V Marca: GaNSystems Quantidadedopacotedefábrica: 1
供应商: Mouser Electronics
分类: Ferramentas de desenvolvimento IC de gestão de alimentação
描述: Ferramentas de desenvolvimento IC de gestão de alimentação Full Bridge Eval Platform Mother Brd
Categoriadeproduto: FerramentasdedesenvolvimentoICdegestãodealimentação Fabricante: GaNSystems Produto: EvaluationBoards Tipo: GateDrivers Ferramentaparaavaliaçãode: GSP65MB Tensãodeentrada: 5V,12V Marca: GaNSystems Quantidadedopacotedefábrica: 1
GS61008T-E01-MR
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Númerodecanales: 1Channel Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 100V RdsOn-Resistenciaentredrenajeyfuente: 7.4mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Temperaturadetrabajomínima: -55C Temperaturadetrabajomáxima: +150C Configuración: Single Modocanal: Enhancement Empaquetado: Reel Empaquetado: MouseReel Empaquetado: CutTape Marca: GaNSystems Altura: 0.52mm Longitud: 6.95mm Sensiblesalahumedad: Yes Producto: MOSFET Serie: GS61008 Cantidaddeempaquedefábrica: 250 Ancho: 3.1mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Númerodecanales: 1Channel Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 100V RdsOn-Resistenciaentredrenajeyfuente: 7.4mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Temperaturadetrabajomínima: -55C Temperaturadetrabajomáxima: +150C Configuración: Single Modocanal: Enhancement Empaquetado: Reel Empaquetado: MouseReel Empaquetado: CutTape Marca: GaNSystems Altura: 0.52mm Longitud: 6.95mm Sensiblesalahumedad: Yes Producto: MOSFET Serie: GS61008 Cantidaddeempaquedefábrica: 250 Ancho: 3.1mm
GS66508P-E05-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN Preproduction Units
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 650V Id-Corrientededrenajecontinua: 30A RdsOn-Resistenciaentredrenajeyfuente: 55mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Qg-Cargadepuerta: 6.5nC Temperaturadetrabajomínima: -55C Temperaturadetrabajomáxima: +150C Modocanal: Enhancement Empaquetado: Tray Marca: GaNSystems Altura: 0.51mm Longitud: 10.05mm MoistureSensitive: Yes Producto: MOSFET Serie: GS66508 Cantidaddeempaquedefábrica: 100 Ancho: 8.68mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN Preproduction Units
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 650V Id-Corrientededrenajecontinua: 30A RdsOn-Resistenciaentredrenajeyfuente: 55mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Qg-Cargadepuerta: 6.5nC Temperaturadetrabajomínima: -55C Temperaturadetrabajomáxima: +150C Modocanal: Enhancement Empaquetado: Tray Marca: GaNSystems Altura: 0.51mm Longitud: 10.05mm MoistureSensitive: Yes Producto: MOSFET Serie: GS66508 Cantidaddeempaquedefábrica: 100 Ancho: 8.68mm
GS66502B-E01-MR
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 7.5A RdsOn-Drain-SourceResistance: 560mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 1.7nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: MouseReel Packaging: CutTape Brand: GaNSystems Height: 0.51mm Length: 6.56mm MoistureSensitive: Yes Product: MOSFET Series: GS66502 FactoryPackQuantity: 250 Width: 5.01mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V Enhancement Mode Transistor
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-3 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 7.5A RdsOn-Drain-SourceResistance: 560mOhms Vgsth-Gate-SourceThresholdVoltage: 1.6V Vgs-Gate-SourceVoltage: 10V Qg-GateCharge: 1.7nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: MouseReel Packaging: CutTape Brand: GaNSystems Height: 0.51mm Length: 6.56mm MoistureSensitive: Yes Product: MOSFET Series: GS66502 FactoryPackQuantity: 250 Width: 5.01mm
GS66516T-EVBDB
供应商: Mouser Electronics
分类: Herramientas de desarrollo de administración de IC
描述: Herramientas de desarrollo de administración de IC GS66516T Half Bridge Daughter Board
Categoríadeproducto: HerramientasdedesarrollodeadministracióndeIC Fabricante: GaNSystems Producto: DaughterCards Tipo: GateDrivers LaHerramientaesparalaEvaluaciónde: GS66516T Voltajedeentrada: 5V Voltajedesalida: 650V Marca: GaNSystems Descripción/Función: GaNE-HEMTtopsidecooled Parautilizarcon: GS66516T Corrientedesalida: 60A Cantidaddeempaquedefábrica: 24
供应商: Mouser Electronics
分类: Herramientas de desarrollo de administración de IC
描述: Herramientas de desarrollo de administración de IC GS66516T Half Bridge Daughter Board
Categoríadeproducto: HerramientasdedesarrollodeadministracióndeIC Fabricante: GaNSystems Producto: DaughterCards Tipo: GateDrivers LaHerramientaesparalaEvaluaciónde: GS66516T Voltajedeentrada: 5V Voltajedesalida: 650V Marca: GaNSystems Descripción/Función: GaNE-HEMTtopsidecooled Parautilizarcon: GS66516T Corrientedesalida: 60A Cantidaddeempaquedefábrica: 24
GS66508B-E01-MR
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 30A RdsOn-Drain-SourceResistance: 50mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 5.8nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: CutTape Packaging: MouseReel Packaging: Reel Brand: GaNSystems FallTime: 5.2ns Height: 0.48mm Length: 8.38mm MoistureSensitive: Yes Pd-PowerDissipation: - RiseTime: 3.7ns Series: GS66508 FactoryPackQuantity: 250 TransistorType: 1N-Channel TypicalTurn-OffDelayTime: 4.1ns TypicalTurn-OnDelayTime: 8ns Width: 6.98mm
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V 30A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-4 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 30A RdsOn-Drain-SourceResistance: 50mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 5.8nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: CutTape Packaging: MouseReel Packaging: Reel Brand: GaNSystems FallTime: 5.2ns Height: 0.48mm Length: 8.38mm MoistureSensitive: Yes Pd-PowerDissipation: - RiseTime: 3.7ns Series: GS66508 FactoryPackQuantity: 250 TransistorType: 1N-Channel TypicalTurn-OffDelayTime: 4.1ns TypicalTurn-OnDelayTime: 8ns Width: 6.98mm
GSP65R25HB-EVB
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools 650V,60A 25mOhm GaN Half Bridge Eval Asm
供应商: Mouser Electronics
分类: Power Management IC Development Tools
描述: Power Management IC Development Tools 650V,60A 25mOhm GaN Half Bridge Eval Asm
GS61008P-E04-TY
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 100V Id-Corrientededrenajecontinua: 90A RdsOn-Resistenciaentredrenajeyfuente: 7.4mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Qg-Cargadepuerta: 16nC Modocanal: Enhancement Empaquetado: Tray Marca: GaNSystems MoistureSensitive: Yes Serie: GS61008
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 100V 90A E-Mode GaN Preproduction Units
Categoríadeproducto: MOSFET Fabricante: GaNSystems Tecnología: GaN Estilodemontaje: SMD/SMT Paquete/Cubierta: GaNPX-4 Polaridaddeltransistor: N-Channel Vds-Tensióndisruptivaentredrenajeyfuente: 100V Id-Corrientededrenajecontinua: 90A RdsOn-Resistenciaentredrenajeyfuente: 7.4mOhms Vgsth-Tensiónumbralentrepuertayfuente: 1.6V Vgs-Tensiónentrepuertayfuente: 10V Qg-Cargadepuerta: 16nC Modocanal: Enhancement Empaquetado: Tray Marca: GaNSystems MoistureSensitive: Yes Serie: GS61008
GS66516B-E01-MR
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V, 60A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-5 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 60A RdsOn-Drain-SourceResistance: 25mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 12.1nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: CutTape Brand: GaNSystems FallTime: 22ns MoistureSensitive: Yes Pd-PowerDissipation: - RiseTime: 12.4ns Series: GS66516 FactoryPackQuantity: 250 TransistorType: 1N-Channel TypicalTurn-OffDelayTime: 14.9ns TypicalTurn-OnDelayTime: 4.6ns
供应商: Mouser Electronics
分类: MOSFET
描述: MOSFET 650V, 60A E-Mode GaN
ProductCategory: MOSFET Manufacturer: GaNSystems Technology: GaN MountingStyle: SMD/SMT Package/Case: GaNPX-5 NumberofChannels: 1Channel TransistorPolarity: N-Channel Vds-Drain-SourceBreakdownVoltage: 650V Id-ContinuousDrainCurrent: 60A RdsOn-Drain-SourceResistance: 25mOhms Vgsth-Gate-SourceThresholdVoltage: 1.1V Vgs-Gate-SourceVoltage: 7V Qg-GateCharge: 12.1nC MinimumOperatingTemperature: -55C MaximumOperatingTemperature: +150C Configuration: Single ChannelMode: Enhancement Packaging: Reel Packaging: CutTape Brand: GaNSystems FallTime: 22ns MoistureSensitive: Yes Pd-PowerDissipation: - RiseTime: 12.4ns Series: GS66516 FactoryPackQuantity: 250 TransistorType: 1N-Channel TypicalTurn-OffDelayTime: 14.9ns TypicalTurn-OnDelayTime: 4.6ns