NTE ELECTRONICS, INC
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商品列表
NTE74LS373
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE1417
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE7165
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE1897
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE2309
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE5858
供应商: Bristol Electronics
供应商: Bristol Electronics
NTE281
供应商: Bristol Electronics
供应商: Bristol Electronics
1N4736A
供应商: Digikey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/56/MFG_1N4736A.jpg Impedance(Max)(Zzt): 3.5 Ohms Category: Discrete Semiconductor ProductsDiodesZenerSingle Zener Diodes description: DIODE ZENER 6.8V 1W AXIAL Product Status: Active Supplier Device Package: Axial manufacturer: NTE Electronics, Inc manufacturerProductNumber: 1N4736A SupplierDevicePackage: Axial Package / Case: Axial Mfr: NTE Electronics, Inc Voltage-Zener(Nom)(Vz): 6.8 V Power-Max: 1 W Current-ReverseLeakage@Vr: 10 µA @ 4 V Operating Temperature: -65°C ~ 20°C isNormallyStocking: True RoHSStatus: ROHS3 Compliant OperatingTemperature: -65°C ~ 20°C Tolerance: ±0.5% ProductStatus: Active Package/Case: Axial ECCN: EAR99 rolledUpProductNumber: 2368-1N4736A-ND MountingType: Through Hole Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 4 V Series: - detailedDescription: Zener Diode 6.8 V 1 W ±0.5% Through Hole Axial datasheetUrl: https://www.nteinc.com/specs/original/1N4728A_4764A.pdf manufacturerUrl: /en/supplier-centers/nte-electronics-inc Power - Max: 1 W Voltage - Zener (Nom) (Vz): 6.8 V Package: Bag HTSUS: 8541.10.0050 Impedance (Max) (Zzt): 3.5 Ohms rolledUpProductId: 11647254
供应商: Digikey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/56/MFG_1N4736A.jpg Impedance(Max)(Zzt): 3.5 Ohms Category: Discrete Semiconductor ProductsDiodesZenerSingle Zener Diodes description: DIODE ZENER 6.8V 1W AXIAL Product Status: Active Supplier Device Package: Axial manufacturer: NTE Electronics, Inc manufacturerProductNumber: 1N4736A SupplierDevicePackage: Axial Package / Case: Axial Mfr: NTE Electronics, Inc Voltage-Zener(Nom)(Vz): 6.8 V Power-Max: 1 W Current-ReverseLeakage@Vr: 10 µA @ 4 V Operating Temperature: -65°C ~ 20°C isNormallyStocking: True RoHSStatus: ROHS3 Compliant OperatingTemperature: -65°C ~ 20°C Tolerance: ±0.5% ProductStatus: Active Package/Case: Axial ECCN: EAR99 rolledUpProductNumber: 2368-1N4736A-ND MountingType: Through Hole Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 10 µA @ 4 V Series: - detailedDescription: Zener Diode 6.8 V 1 W ±0.5% Through Hole Axial datasheetUrl: https://www.nteinc.com/specs/original/1N4728A_4764A.pdf manufacturerUrl: /en/supplier-centers/nte-electronics-inc Power - Max: 1 W Voltage - Zener (Nom) (Vz): 6.8 V Package: Bag HTSUS: 8541.10.0050 Impedance (Max) (Zzt): 3.5 Ohms rolledUpProductId: 11647254
PN3645
供应商: Digikey
Category: Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors RoHSStatus: RoHS non-compliant Voltage-CollectorEmitterBreakdown(Max): 60 V OperatingTemperature: -55°C ~ 150°C (TJ) ProductStatus: Active Package/Case: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 TransistorType: PNP MountingType: Through Hole Current-CollectorCutoff(Max): 35nA Series: - Frequency-Transition: - SupplierDevicePackage: TO-92-3 Mfr: NTE Electronics, Inc VceSaturation(Max)@Ib,Ic: 400mV @ 15mA, 150mA DCCurrentGain(hFE)(Min)@Ic,Vce: 100 @ 150mA, 10V Current-Collector(Ic)(Max): 800 mA Package: Bag HTSUS: 8541.21.0095 Power-Max: 625 mW
供应商: Digikey
Category: Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors RoHSStatus: RoHS non-compliant Voltage-CollectorEmitterBreakdown(Max): 60 V OperatingTemperature: -55°C ~ 150°C (TJ) ProductStatus: Active Package/Case: TO-226-3, TO-92-3 (TO-226AA) ECCN: EAR99 TransistorType: PNP MountingType: Through Hole Current-CollectorCutoff(Max): 35nA Series: - Frequency-Transition: - SupplierDevicePackage: TO-92-3 Mfr: NTE Electronics, Inc VceSaturation(Max)@Ib,Ic: 400mV @ 15mA, 150mA DCCurrentGain(hFE)(Min)@Ic,Vce: 100 @ 150mA, 10V Current-Collector(Ic)(Max): 800 mA Package: Bag HTSUS: 8541.21.0095 Power-Max: 625 mW
TIP102
供应商: Digikey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2660/497~TO220-3TO220AB~~3.JPG Category: Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Voltage-CollectorEmitterBreakdown(Max): 100 V description: TRANS NPN DARL 100V 8A TO220 Product Status: Active Voltage - Collector Emitter Breakdown (Max): 100 V Supplier Device Package: TO-220 manufacturer: NTE Electronics, Inc manufacturerProductNumber: TIP102 SupplierDevicePackage: TO-220 Transistor Type: NPN - Darlington Package / Case: TO-220-3 Mfr: NTE Electronics, Inc DCCurrentGain(hFE)(Min)@Ic,Vce: 1000 @ 3A, 4V Power-Max: 2 W Operating Temperature: 150°C (TJ) isNormallyStocking: True Frequency - Transition: - RoHSStatus: ROHS3 Compliant Current - Collector (Ic) (Max): 8 A OperatingTemperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A ProductStatus: Active Package/Case: TO-220-3 ECCN: EAR99 TransistorType: NPN - Darlington rolledUpProductNumber: 2368-TIP102-ND MountingType: Through Hole Mounting Type: Through Hole Current-CollectorCutoff(Max): 50µA Series: - Frequency-Transition: - detailedDescription: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220 datasheetUrl: https://www.nteinc.com/specs/original/TIP100_102.pdf Power - Max: 2 W VceSaturation(Max)@Ib,Ic: 2.5V @ 80mA, 8A Current-Collector(Ic)(Max): 8 A Current - Collector Cutoff (Max): 50µA Package: Bag HTSUS: 8541.29.0095 rolledUpProductId: 11654856 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
供应商: Digikey
lnkProductPhoto: https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2660/497~TO220-3TO220AB~~3.JPG Category: Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Voltage-CollectorEmitterBreakdown(Max): 100 V description: TRANS NPN DARL 100V 8A TO220 Product Status: Active Voltage - Collector Emitter Breakdown (Max): 100 V Supplier Device Package: TO-220 manufacturer: NTE Electronics, Inc manufacturerProductNumber: TIP102 SupplierDevicePackage: TO-220 Transistor Type: NPN - Darlington Package / Case: TO-220-3 Mfr: NTE Electronics, Inc DCCurrentGain(hFE)(Min)@Ic,Vce: 1000 @ 3A, 4V Power-Max: 2 W Operating Temperature: 150°C (TJ) isNormallyStocking: True Frequency - Transition: - RoHSStatus: ROHS3 Compliant Current - Collector (Ic) (Max): 8 A OperatingTemperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A ProductStatus: Active Package/Case: TO-220-3 ECCN: EAR99 TransistorType: NPN - Darlington rolledUpProductNumber: 2368-TIP102-ND MountingType: Through Hole Mounting Type: Through Hole Current-CollectorCutoff(Max): 50µA Series: - Frequency-Transition: - detailedDescription: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220 datasheetUrl: https://www.nteinc.com/specs/original/TIP100_102.pdf Power - Max: 2 W VceSaturation(Max)@Ib,Ic: 2.5V @ 80mA, 8A Current-Collector(Ic)(Max): 8 A Current - Collector Cutoff (Max): 50µA Package: Bag HTSUS: 8541.29.0095 rolledUpProductId: 11654856 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V