北京京北通宇电子元件有限公司 更新了商品
TLE6251DXUMA2 INFINEON CAN芯片 As an interface between the physical bus layer and the CAN protocol controller, the TLE6251D drives the signals to the bus and protects the microcontroller against interferences generated within the network 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTS70082EPAXUMA1 INFINEON 电源管理（PMIC） The device is integrated in SMART7 technology. 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTS70101EPAXUMA1 INFINEON 电源管理（PMIC） The device is integrated in SMART7 technology. 查看详细

北京京北通宇电子元件有限公司 更新了商品
ITS724GFUMA1 INFINEON 电源管理（PMIC） 高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。 查看详细

北京京北通宇电子元件有限公司 更新了商品
ITS42K5DLDFXUMA1 INFINEON 电源管理（PMIC） Each channel of the device is able to drive loads up to 250mA. Due to its integrated freewheeling diodes, the ITS42k5D-LD-F is perfectly suitable for driving decentralized loads with long cables or any other kind of inductive loads. The integrated freewhee 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTS70082EPZXUMA1 INFINEON 电源管理（PMIC） The device is suitable for applications with extended or/and high temperature mission profiles. 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTS70802EPZXUMA1 INFINEON 电源管理（PMIC） The device is suitable for applications with extended or/and high temperature mission profiles. 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTT61002ERAXUMA1 INFINEON 电源管理（PMIC） The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to 1x P21W 24V or 1x R10W 12V, as well as LEDs in the harsh automotive environ 查看详细

北京京北通宇电子元件有限公司 更新了商品
BTS500101TAEATMA1 INFINEON 电源管理（PMIC） The Power PROFET™ BTS50010-1TAE is a smart high-side switch designed to drive currents up to 40A DC in 12V systems 查看详细

北京京北通宇电子元件有限公司 更新了商品
TLE4264GHTMA1 INFINEON 线性稳压器（LDO） The IC regulates an input voltage V I , in the range 5.5 V < V I < 45 V to V Qrated = 5.0 V. The maximum output current is more than 120 mA. This IC is shortcircuit-proof and features temperature protection that disables the circuit at overtemperature. 查看详细

北京京北通宇电子元件有限公司 更新了商品
2ED21844S06JXUMA1 INFINEON 栅极驱动IC 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT , with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2184S06F . Based on Infineon’s SOI-technology , having ex 查看详细

北京京北通宇电子元件有限公司 更新了商品
2ED2109S06FXUMA1 INFINEON 栅极驱动IC 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package version is also available: 2ED21094S06J . Based on Infineon’s SOI-technology , having excellent rugge 查看详细