北京京北通宇电子元件有限公司 更新了商品
IKP20N60H3XKSA1 INFINEON IGBT管 IGBT管 High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO220 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, 查看详细

北京京北通宇电子元件有限公司 更新了商品
AUIRF7647S2TR INFINEON 场效应管（MOSFET） 场效应管（MOSFET） 100V 汽车级的单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET SC 封装，额定电流为24A。 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPSA70R360P7SAKMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPB60R105CFD7ATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D 2 PAK package is ideally suited for resonant topologies in high power SMPS , such as server , telecom and EV charging stations , where it enables significant efficiency improvements. As 查看详细

北京京北通宇电子元件有限公司 更新了商品
IRL60SL216 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications i 查看详细

北京京北通宇电子元件有限公司 更新了商品
IRF8302MTRPBF INFINEON 场效应管（MOSFET） 场效应管（MOSFET） The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications i 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPA95R450P7XKSA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPP60R022S7XKSA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） With a design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best R DS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush rel 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPT026N10N5ATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPB60R055CFD7ATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D 2 PAK package is ideally suited for resonant topologies in high power SMPS , such as server , telecom and EV charging stations , where it enables significant efficiency improvements. As 查看详细

北京京北通宇电子元件有限公司 更新了商品
ISC019N04NM5ATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） With the OptiMOS TM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high V th in the normal level portfolio offers immunity to false turn-on due 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPDD60R170CFD7XTMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Q g ), improved turn-off behavior and a reverse recove 查看详细