北京京北通宇电子元件有限公司 更新了商品
IPD90N04S4L04ATMA1 INFINEON 场效应管（MOSFET） Simulation/ SPICE-Model 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPD050N10N5ATMA1 INFINEON 场效应管（MOSFET） OptiMOS™ 5 100V power MOSFET IPD050N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower R DS(on) 查看详细

北京京北通宇电子元件有限公司 更新了商品
TLT9251VLEXUMA1 INFINEON CAN芯片 It is designed to fulfill the requirements of the following standards: TLT9251VLE offers bus wake-up feature and supports 3.3 V as well as 5V supplied microcontrollers using Vio interface. TLT9251VLE is realized in tiny leadless TSON-8 package with Lead Ti 查看详细

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IDWD40G120C5XKSA1 INFINEON 肖特基二极管 CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes 查看详细

北京京北通宇电子元件有限公司 更新了商品
IDH04G65C5XKSA2 INFINEON 肖特基二极管 The CoolSiC™ Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a 查看详细

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BSZ0503NSIATMA1 INFINEON 场效应管（MOSFET） With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. 查看详细

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IMW65R072M1HXKSA1 INFINEON 场效应管（MOSFET） CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R072M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art tren 查看详细

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BSC070N10LS5ATMA1 INFINEON 场效应管（MOSFET） This OptiMOS™ 5 100V power MOSFET in logic level reduces switching losses through a low gate charge without compromising conduction losses. The logic level power MOSFET comes in a SuperSO8 package and supports operations at high switching frequencies. In a 查看详细

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IDP30E65D2XKSA1 INFINEON 其他二极管 Rapid 2 switching 650 V, 30 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz. 查看详细

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IPB024N08N5ATMA1 INFINEON 场效应管（MOSFET） Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB024N08N5 offers a R DS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous recti 查看详细

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IRF9388TRPBF INFINEON 场效应管（MOSFET） The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications i 查看详细

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IPB60R099P7ATMA1 INFINEON 场效应管（MOSFET） The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R on xA and the inherently low gate charge 查看详细