北京京北通宇电子元件有限公司 更新了商品
IRS21094SPBF INFINEON 栅极驱动IC 栅极驱动IC EiceDRIVER™ 600 V h alf bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs . Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. For the new version with our SOI technology we re 查看详细

北京京北通宇电子元件有限公司 更新了商品
IRL7833STRLPBF INFINEON 场效应管（MOSFET） 场效应管（MOSFET） 30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 查看详细

北京京北通宇电子元件有限公司 更新了商品
IPD200N15N3GATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing t 查看详细

北京京北通宇电子元件有限公司 更新了商品
BGC100GN6E6327XTSA1 INFINEON 天线 天线 The BGC100GN6 bi-directional coupler IC is designed for 2G/3G/4G RF front end applications 查看详细

北京京北通宇电子元件有限公司 更新了商品
BGSA402ML10E6327XTSA1 INFINEON 天线 天线 The BGSA402ML10 is a versatile shunt to ground 4xSingle-Pole Single-Throw (4xSPST) RF antenna tuning switch 查看详细

北京京北通宇电子元件有限公司 更新了商品
ICE5QR2280BGXUMA1 INFINEON AC-DC控制器和稳压器 AC-DC控制器和稳压器 Infineon’s 5 th generation of quasi-resonant CoolSET™ devices offers high performance and a comprehensive suite of protection. It integrates a flyback controller with a valley-switching scheme and an 800V CoolMOS™ P7 superjunction MOSFET in single DSO-12 p 查看详细

北京京北通宇电子元件有限公司 更新了商品
BGAH1A10E6327XTSA1 INFINEON RF放大器 RF放大器 RF MMIC 3 TO 6 GHZ 查看详细

北京京北通宇电子元件有限公司 更新了商品
IQE006NE2LM5ATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package size, making it easy to use in the same PCB routing as the Drain-Down solution 查看详细

北京京北通宇电子元件有限公司 更新了商品
IQE006NE2LM5CGATMA1 INFINEON 场效应管（MOSFET） 场效应管（MOSFET） With Infineon’s innovative Source-Down technology, the OptiMOS™ low-voltage power MOSFET (IQE006NE2LM5CG) is available as a Center-Gate footprint version 查看详细

北京京北通宇电子元件有限公司 更新了商品
1ED3120MU12HXUMA1 INFINEON 栅极驱动IC 栅极驱动IC EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) for IGBTs , MOSFETs and SiC MOSFETs 查看详细

北京京北通宇电子元件有限公司 更新了商品
1ED3123MU12HXUMA1 INFINEON 栅极驱动IC 栅极驱动IC EiceDRIVER™ Compact single-channel isolated gate driver with 14 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) for IGBTs , MOSFETs and SiC MOSFETs 查看详细

北京京北通宇电子元件有限公司 更新了商品
1EDB9275FXUMA1 INFINEON 栅极驱动IC 栅极驱动IC The EiceDRIVER™ 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3 kV rms 查看详细