GP1S094HCZ0F

GP1S094HCZ0F

SHARP MICROELECTRONICS

光学传感器 - 光断续器 - 槽型 - 晶体管输出
SENSOR OPT SLOT PHOTOTRAN PCB MT
EU RoHSCompliant
Gap Width (mm)3
TypeTransmissive
Number of Channels per Chip1
Output DevicePhototransistor
Minimum Operating Temperature (°C)-25
Maximum Operating Temperature (°C)85
Slit Width (mm)0.3
Maximum Collector Current (mA)20
Maximum Collector Emitter Voltage (V)35
Maximum Fall Time (ns)150000
Maximum Forward Current (mA)50
Maximum Power Dissipation (mW)100
Maximum Reverse Voltage (V)6
Maximum Rise Time (ns)150000
MountingThrough Hole
Package Height (mm)4.8
Package Length (mm)5.5
Package Width (mm)2.6
PCB changed4
Pin Count4
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GP1S094HCZ0F1Sheet No.: D3-A00601FENDate Oct. 3. 2005© SHARP Corporation Notice The content of data sheet is subject to change without prior notice. In the absence of conÞ rmation by device speci Þ cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device speci Þ cation sheets before using any SHARP device. GP1S094HCZ0FGap : 3mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter DescriptionGP1S094HCZ0F is a compact-package, photo-transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has a wide gap and positioning pins. Features1. Transmissive with phototransistor output 2. Highlights: Ł Compact Size Ł Positioning Pin to prevent misalignment 3. Key Parameters: Ł Gap Width : 3mm Ł Slit Width (detector side): 0.3mm Ł Package : 5.5 ×2.6×4.8mm4. RoHS directive compliantAgency approvals/Compliance1. Compliant with RoHS directiveApplications1. Detection of object presence or motion. 2. Example: printer, lens control for camera 2Sheet No.: D3-A00601FENGP1S094HCZ0FInternal Connection DiagramOutline Dimensions(Unit : mm)Product mass : approx. 0.085gPlating material : SnCu (Cu : TYP. 2%) 2314Top view 1234AnodeCollector Emitter Cathode(C0.3)a'a5.50.15+0.20.13.1+0.3 0.24.550.75±0.052.620.40.5(0.05)4.8(0.75)30.83±0.23Center of light axisC0.23421(C0.4)(C0.3)a-a' section(0.3)Slit width1+0 0.1Top view Ł UnspeciÞ ed tolerance : ±0.2mm Ł Dimensions in parenthesis are shown for reference.Ł The dimensions indicated by refer to those measured from the lead base.Ł The dimensions shown do not include burr. Burr's dimension shall be : 0.15mm MAX.Ł The lead may be exposed at the shaded portion.Ł This portion has no SnCu plating.Country of originJapan3Sheet No.: D3-A00601FENGP1S094HCZ0FAbsolute Maximum RatingsElectro-optical Characteristics(Ta=25ûC )ParameterSymbolRatingUnit InputForward currentIF50mA Reverse voltageVR6VPower dissipationP75mW OutputCollector-emitter voltage VCEO35V Emitter-collector voltage VECO6VCollector currentIC20mA Collector power dissipationP C75mW Total power dissipation Ptot100mW Operating temperatureTopr25 to +85ûCStorage temperatureTstg40 to +100ûC1Soldering temperatureTsol260ûC1 For 5s or less(Ta=25ûC )ParameterSymbolConditionMIN.TYP.MAX.Unit InputForward voltageVFIF=20mA1.21.4V Reverse currentIRVR=3V10AOutputCollector dark current ICEOVCE=20V100nA Transfer charac-teristicsCollector currentICVCE=5V, I F=5mA40 400ACollector-emitter saturation voltage VCE(sat)IF=10mA, IC=40A0.4V Response timeRise timet rVCE=5V, I C=100A, RL=1k50150 sFall timet f50150 s1mm or moreSoldering area4Sheet No.: D3-A00601FENGP1S094HCZ0FFig.5 Collector Current vs. Collector-emitter Voltage Fig.6 Relative Collector Current vs. Ambient Temperature Fig.3 Forward Current vs. Forward VoltageFig.4 Collector Current vs. Forward Current Fig.1 Forward Current vs. Ambient Temperature Fig.2 Power Dissipation vs. Ambient Temperature Forward current IF (mA)Ambient temperature Ta (ûC)250255075100 01020 30 40 50 6085Ambient temperature Ta (ûC)250255075100 020154060807585100120Power dissipation P, P c, Ptot (mW)PtotP, P cForward current IF (mA)Forward voltage VF (V)00.511.52 1101002.53 25ûC0ûC50ûCTa75ûC25ûCCollector current Ic (mA)Forward current IF (mA)0.200102 00.40.60.81VCE=5VTa =25ûCCollector current IC (mA)Collector-emitter voltage V CE (V)5mA10mA20mA30mA40mA00246810 0.40.60.810.2IF=50mARelative collector current (%)Ambient temperature Ta (ûC)120110 100908070 605040302010025025507585 IF5mAVCE5V5Sheet No.: D3-A00601FENGP1S094HCZ0FFig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig.8 Collector Dark Current vs. Ambient Temperature Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time Fig.11 Detecting Position Characteristics (1)Fig.12 Detecting Position Characteristics (2)Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.Collector-emitter saturation voltage V CE(sat) (V)Ambient temperature Ta (ûC)0.060.080.10.12 0.14 0.16 0.180.225025507585 IF=10mAIC=40AResponse time (s)Load resistance RL (k)0.11101001101001 000trtftdtsVCE5VIC100A10%InputOutputInputOutput90%VCCRDRLtftrtdts Collector Dark current ICEO (A)Ambient temperature Ta (ûC)0255075100 1061071081091010VCE20VRelative collector current (%)Shield moving distance L (mm)00.511.522.5 0102030405060 70 8090100L=0LIF=5mAVCE=5VRelative collector current (%)Shield moving distance L (mm)00.511.52 0102030405060 70 8090100L=0LIF=5mAVCE=5V6Sheet No.: D3-A00601FENGP1S094HCZ0FDesign ConsiderationsDesign guide1) Prevention of detection errorTo prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light.2) Position of opaque boardOpaque board shall be installed at place 1.6mm or more from the top of elements.(Example)This product is not designed against irradiation and incorporates non-coherent IRED.DegradationIn general, the emission of the IRED used in photointerrupter will degrade over time.In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.PartsThis product is assembled using the below parts. Ł Photodetector (qty. : 1) CategoryMaterial Maximum Sensitivity wavelength (nm)Sensitivity wavelength (nm)Response time (s)PhototransistorSilicon (Si) 930700 to 1 20020 Ł Photo emitter (qty. : 1) CategoryMaterialMaximum light emitting wavelength (nm)I/O Frequency (MHz)Infrared emitting diode(non-coherent)Gallium arsenide (GaAs)9500.3 Ł Material CaseLead frameLead frame platingBlack polyphernylene sulÞ de resin (UL94 V-0) 42AlloySnCu plating1.6mm or more1.6mm or more7Sheet No.: D3-A00601FENGP1S094HCZ0FManufacturing GuidelinesSoldering MethodFlow Soldering:Soldering should be completed below 260ûC and within 5 s.Please solder within one time.Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any extcrhal force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reß ow. Hand solderingHand soldering should be completed within 3 s when the point of solder iron is below 350C.Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature.Other noticePlease take care not to let any external force exert on lead pins. Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.Cleaning instructionsSolvent cleaning :Solvent temperature should be 45ûC or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning :Do not execute ultrasonic cleaning.Recommended solvent materials :Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.Presence of ODCThis product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) SpeciÞ c brominated ß ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).ŁLead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).8Sheet No.: D3-A00601FENGP1S094HCZ0FPackage speciÞ cationSleeve packagePackage materialsSleeve : PolyphernyleneStopper : Styrene-ElastomerPackage methodMAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case.9Sheet No.: D3-A00601FENGP1S094HCZ0FImportant Notices· The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.· Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the speciÞ cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.· Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used speciÞ ed in the relevant speci Þ cation sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as:--- Personal computers --- OfÞ ce automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as:--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)--- Traf Þ c signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as:--- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba).· If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.· This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication.[H127]
updated: 2020-09-22 23:20:50