物料参数
| Category: | MOSFET |
| Maximum Drain Source Voltage: | 600 V |
| Typical Turn-Off Delay Time: | 55 ns |
| Channel Mode: | Enhancement |
| Maximum Continuous Drain Current: | ±4 A |
| Maximum Gate Source Voltage: | ±20 V |
| Mounting: | Through Hole |
| Package: | 3TO-220FM |
| Typical Turn-On Delay Time: | 22 ns |
| Operating Temperature: | -55 to 150 °C |
| RDS-on: | 0.98@10V Ohm |
| Manufacturer: | Rohm Semiconductor |
| Typical Fall Time: | 40 ns |