| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| TransistorPolarity: | N-Channel |
| RoHS: | RoHS Compliant |
| Pd-PowerDissipation: | 80W |
| RdsOn-Drain-SourceResistance: | 380mOhms |
| Tradename: | DTMOSV |
| UnitWeight: | 0.012699oz |
| Id-ContinuousDrainCurrent: | 9.7A |
| Technology: | Si |
| RiseTime: | 23ns |
| Manufacturer: | Toshiba |
| TypicalTurn-OnDelayTime: | 60ns |
| ChannelMode: | Enhancement |
| FactoryPackQuantity: | 2000 |
| TypicalTurn-OffDelayTime: | 150ns |
| Vgs-Gate-SourceVoltage: | -30V,+30V |
| Vds-Drain-SourceBreakdownVoltage: | 600V |
| ProductType: | MOSFET |
| Package/Case: | DPAK-3 |
| NumberofChannels: | 1Channel |
| TransistorType: | 1N-Channel |
| Brand: | Toshiba |
| Series: | TK380P60Y |
| MountingStyle: | SMD/SMT |
| Subcategory: | MOSFETs |
| ProductCategory: | MOSFET |
| Packaging: | CutTape |
| MinimumOperatingTemperature: | -55C |
| FallTime: | 8.2ns |
| Vgsth-Gate-SourceThresholdVoltage: | 4V |
| Qg-GateCharge: | 20nC |
