SIHP22N60AE-GE3

制造商: 供应商:

分类: MOSFET

Datasheet:

描述: MOSFET N-Ch 650V Vds 12nC Qgs

物料参数

ProductCategory:MOSFET
Manufacturer:Vishay
Technology:Si
MountingStyle:ThroughHole
Package/Case:TO-220AB-3
NumberofChannels:1Channel
TransistorPolarity:N-Channel
Vds-Drain-SourceBreakdownVoltage:600V
Id-ContinuousDrainCurrent:20A
RdsOn-Drain-SourceResistance:0.156Ohms
Vgsth-Gate-SourceThresholdVoltage:4V
Vgs-Gate-SourceVoltage:30V
Qg-GateCharge:48nC
MinimumOperatingTemperature:-55C
MaximumOperatingTemperature:+150C
Configuration:Single
ChannelMode:Enhancement
Packaging:Tube
Brand:Vishay/Siliconix
FallTime:21ns
Height:15.49mm
Length:10.41mm
Pd-PowerDissipation:179W
RiseTime:33ns
Series:E
FactoryPackQuantity:1000
TypicalTurn-OffDelayTime:45ns
TypicalTurn-OnDelayTime:19ns
Width:4.7mm
UnitWeight:0.063493oz