物料参数
| ProductCategory: | RFBipolarTransistors |
| Manufacturer: | AdvancedSemiconductor,Inc. |
| TransistorType: | BipolarPower |
| Technology: | Si |
| TransistorPolarity: | NPN |
| DCCollector/BaseGainhfeMin: | 10 |
| Collector-EmitterVoltageVCEOMax: | 18V |
| Emitter-BaseVoltageVEBO: | 4V |
| ContinuousCollectorCurrent: | 20A |
| MinimumOperatingTemperature: | -65C |
| MaximumOperatingTemperature: | +200C |
| MountingStyle: | Screw |
| Package/Case: | M111 |
| Packaging: | Tray |
| Brand: | AdvancedSemiconductor,Inc. |
| OperatingFrequency: | 175MHz |
| Pd-PowerDissipation: | 270W |
| Type: | RFBipolarPower |