SISS27ADN-T1-GE3

制造商: 供应商:

分类: MOSFET

Datasheet:

描述: MOSFET P-Ch -30V Vds 36.6nC Qg Typ

物料参数

ProductCategory:MOSFET
Manufacturer:Vishay
Technology:Si
MountingStyle:SMD/SMT
Package/Case:PowerPAK-1212-8
NumberofChannels:1Channel
TransistorPolarity:P-Channel
Vds-Drain-SourceBreakdownVoltage:-30V
Id-ContinuousDrainCurrent:-50A
RdsOn-Drain-SourceResistance:0.0042Ohms
Vgsth-Gate-SourceThresholdVoltage:-2.2V
Vgs-Gate-SourceVoltage:20V
Qg-GateCharge:117nC
MinimumOperatingTemperature:-55C
MaximumOperatingTemperature:+150C
Configuration:1P-Channel
ChannelMode:Enhancement
Packaging:CutTape
Packaging:Reel
Packaging:MouseReel
Brand:Vishay/Siliconix
FallTime:22ns
ForwardTransconductance-Min:57S
Height:1.04mm
Length:3.3mm
Pd-PowerDissipation:57W
RiseTime:35ns
Series:SIS
FactoryPackQuantity:3000
TransistorType:1P-Channel
TypicalTurn-OffDelayTime:38ns
TypicalTurn-OnDelayTime:48ns
Width:3.3mm