FDN358P
制造商:
ONSEMI
供应商:
物料参数
| TypicalTurn-OnDelayTime(ns): | 5 |
| Configuration: | Single |
| MinimumGateThresholdVoltage(V): | 1 |
| MaximumContinuousDrainCurrent(A): | 1.5 |
| MaximumGateThresholdVoltage(V): | 3 |
| ECCN(US): | EAR99 |
| PPAP: | No |
| MaximumOperatingTemperature(°C): | 150 |
| Automotive: | No |
| TypicalGateThresholdVoltage(V): | 1.9 |
| TypicalGateCharge@10V(nC): | 4 |
| PackageLength: | 2.92 |
| ChannelMode: | Enhancement |
| MaximumPowerDissipation(mW): | 500 |
| TypicalFallTime(ns): | 2 |
| MaximumPowerDissipationonPCB@TC=25°C(W): | 0.5 |
| StandardPackageName: | SOT |
| NumberofElementsperChip: | 1 |
| MaximumGateSourceVoltage(V): | ±20 |
| MaximumDrainSourceVoltage(V): | 30 |
| MaximumContinuousDrainCurrentonPCB@TC=25°C(A): | 1.5 |
| TypicalReverseTransferCapacitance@Vds(pF): | 26@15V |
| MaximumPulsedDrainCurrent@TC=25°C(A): | 5 |
| Mounting: | Surface Mount |
| SupplierPackage: | SOT-23 |
| TypicalGatetoSourceCharge(nC): | 0.8 |
| PackageHeight: | 0.94 |
| TypicalRiseTime(ns): | 13 |
| PackageWidth: | 1.4 |
| MaximumGateSourceLeakageCurrent(nA): | 100 |
| TypicalInputCapacitance@Vds(pF): | 182@15V |
| MaximumDrainSourceResistance(MOhm): | 125@10V |
| ProductCategory: | Power MOSFET |
| Packaging: | Tape and Reel |
| OperatingJunctionTemperature(°C): | -55 to 150 |
| TypicalDiodeForwardVoltage(V): | 0.76 |
| TypicalGatePlateauVoltage(V): | 3.1 |
| HTS: | 8541.29.00.95 |
| TypicalTurn-OffDelayTime(ns): | 12 |
| PartStatus: | Active |
| TypicalGatetoDrainCharge(nC): | 0.8 |
| TypicalOutputCapacitance(pF): | 56 |
| LeadShape: | Gull-wing |
| PCBchanged: | 3 |
| MaximumIDSS(uA): | 1 |
| MaximumJunctionAmbientThermalResistanceonPCB(°C/W): | 270 |
| ProcessTechnology: | PowerTrench |
| MaximumPositiveGateSourceVoltage(V): | 20 |
| MaximumDiodeForwardVoltage(V): | 1.2 |
| TypicalGateCharge@Vgs(nC): | 4@10V |
| MinimumOperatingTemperature(°C): | -55 |
| ChannelType: | P |
| PinCount: | 3 |