物料参数
| Vgs(th)(Max)@Id: | 4V @ 250µA |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| FETFeature: | - |
| DriveVoltage(MaxRdsOn,MinRdsOn): | 10V |
| GateCharge(Qg)(Max)@Vgs: | 178 nC @ 10 V |
| SupplierDevicePackage: | TO-247AD (IXFH) |
| BaseProductNumber: | IXFH230 |
| Technology: | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C: | 230A (Tc) |
| Vgs(Max): | ±20V |
| Mfr: | IXYS |
| CaliforniaProp65: | |
| PowerDissipation(Max): | 480W (Tc) |
| RoHSStatus: | ROHS3 Compliant |
| DraintoSourceVoltage(Vdss): | 75 V |
| OperatingTemperature: | -55°C ~ 175°C (TJ) |
| ProductStatus: | Active |
| RdsOn(Max)@Id,Vgs: | 4.2mOhm @ 50A, 10V |
| Package/Case: | TO-247-3 |
| MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
| ECCN: | EAR99 |
| REACHStatus: | REACH Unaffected |
| MountingType: | Through Hole |
| InputCapacitance(Ciss)(Max)@Vds: | 10500 pF @ 25 V |
| Series: | HiPerFET™, TrenchT2™ |
| FETType: | N-Channel |
| Package: | Tube |
| HTSUS: | 8541.29.0095 |