MIKROE-1820

制造商: MIKROELEKTRONIKA D.O.O. 供应商:

物料参数

ViewingOrientation:Top View
MaximumRiseTime(ns):15000(Typ)
PhototransistorType:Phototransistor
MaximumCollector-EmitterVoltage(V):30
HTS:8541.41.00.00
LensShapeType:Domed
ECCN(US):EAR99
PartStatus:Active
PPAP:No
MaximumOperatingTemperature(°C):85
Automotive:No
LeadShape:Through Hole
MaximumDarkCurrent(nA):100
PCBchanged:2
LensColor:Black
MaximumCollectorCurrent(mA):20
Polarity:NPN
NumberofChannelsperChip:1
Diameter:5.9
MaximumPowerDissipation(mW):75
MaximumEmitter-CollectorVoltage(V):5
Material:Silicon
MaximumCollector-EmitterSaturationVoltage(V):0.4
Mounting:Through Hole
SupplierPackage:T-1
Type:Chip
PackageHeight:8.6
MaximumFallTime(ns):15000(Typ)
FabricationTechnology:NPN Transistor
PeakWavelength(nm):940
Packaging:Bag
MinimumOperatingTemperature(°C):-25
PinCount:2