MIKROE-1820
制造商: MIKROELEKTRONIKA D.O.O. 供应商:
物料参数
ViewingOrientation: | Top View |
MaximumRiseTime(ns): | 15000(Typ) |
PhototransistorType: | Phototransistor |
MaximumCollector-EmitterVoltage(V): | 30 |
HTS: | 8541.41.00.00 |
LensShapeType: | Domed |
ECCN(US): | EAR99 |
PartStatus: | Active |
PPAP: | No |
MaximumOperatingTemperature(°C): | 85 |
Automotive: | No |
LeadShape: | Through Hole |
MaximumDarkCurrent(nA): | 100 |
PCBchanged: | 2 |
LensColor: | Black |
MaximumCollectorCurrent(mA): | 20 |
Polarity: | NPN |
NumberofChannelsperChip: | 1 |
Diameter: | 5.9 |
MaximumPowerDissipation(mW): | 75 |
MaximumEmitter-CollectorVoltage(V): | 5 |
Material: | Silicon |
MaximumCollector-EmitterSaturationVoltage(V): | 0.4 |
Mounting: | Through Hole |
SupplierPackage: | T-1 |
Type: | Chip |
PackageHeight: | 8.6 |
MaximumFallTime(ns): | 15000(Typ) |
FabricationTechnology: | NPN Transistor |
PeakWavelength(nm): | 940 |
Packaging: | Bag |
MinimumOperatingTemperature(°C): | -25 |
PinCount: | 2 |