| EU RoHS: | Compliant |
| Material: | Si |
| Type: | NPN |
| Configuration: | Single Dual Emitter |
| Number of Elements per Chip: | 1 |
| Maximum Collector Emitter Voltage (V): | 3.3 |
| Maximum Collector Base Voltage (V): | 15 |
| Maximum Emitter Base Voltage (V): | 1.5 |
| Maximum DC Collector Current (A): | 0.035 |
| Maximum Power Dissipation (mW): | 115 |
| Minimum DC Current Gain: | 50@5mA@2V |
| Minimum DC Current Gain Range: | 50 to 120 |
| Maximum Transition Frequency (MHz): | 25000(Typ) |
| Quantity per Packaging (Pieces): | 3000 |
| Minimum Operating Temperature (°C): | -65 |
| Maximum Operating Temperature (°C): | 150 |
| Temperature Flag: | Stg/Jun |
| Maximum Power 1dB Compression (dBm): | 11(Typ) |
| Operational Bias Conditions: | 2V/20mA |
| Typical Power Gain (dB): | 20 |
| Maximum 3rd Order Intercept Point (dBm): | 22(Typ) |
| Maximum Emitter Cut-Off Current (nA): | 200 |
| Packaging: | Tape and Reel |
| Maximum DC Collector Current Range (A): | 0.001 to 0.06 |
| Maximum Collector Emitter Voltage Range (V): | <20 |
