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CBI
库存:1738
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¥0.0921 |
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CBI-ELECTRIC GROUP
库存:1780
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¥0.1019 |
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CHANGJIANG ELECTRONICS TECH (CJ)
库存:8889
包装:20
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CJ
N沟道 耐压:60V 电流:340mA 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):340mA 功率(Pd):200mW 导通电阻(RDS(on)@Vgs,Id):900mΩ@10V 阈值电压(Vgs(th)@Id):2.5V
库存:8554
包装:20
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¥0.2129 |
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¥0.1495 |
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¥0.1359 |
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DIYI
库存:2176
包装:5
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¥0.3782 |
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¥0.3339 |
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¥0.3006 |
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¥0.2740 |
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¥0.2607 |
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DOESHARE
NMOS 60V 340mA RDS(on)=2.5Ω WITH ESD SOT-323
库存:0
包装:20
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¥0.0777 |
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¥0.0760 |
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¥0.0736 |
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ELECSUPER
库存:1306
包装:20
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ELECSUPER ELECTRONICS
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GP
封装/外壳:SOT-323 FET类型:N-Channel 工作温度:-55℃~150℃ 栅极电压Vgs:±20V 漏源极电压Vds:60V
HXY
库存:2736
包装:20
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HXY MOSFET
这款消费级N沟道MOSFET封装为SOT-323,具有60V高击穿电压及0.1A电流容量,特别适合于低功耗电子设备的电源管理与精准开关应用。其微型尺寸与高效性能相结合,提供理想的电路设计解决方案。
库存:2572
包装:20
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JESTEK
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LGE
场效应管(MOSFET) 漏源电压(Vdss):60V;连续漏极电流(Id):340mA;功率(Pd):200mW;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V;阈值电压(Vgs(th)@Id):2.5V;输入电容(Ciss@Vds):40pF;反向传输电容(Crss@Vds):10pF
库存:2543
包装:20
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LGE
库存:2772
包装:20
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ON SEMICONDUCTOR
库存:85
包装:1
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¥0.5157 |
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60V,310mA,1.6Ω,N沟道增强型场效应晶体管
库存:0
包装:100
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60V,310mA,1.6Ω,N沟道增强型场效应晶体管
库存:2680
包装:5
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60V,310mA,1.6Ω,N沟道增强型场效应晶体管
库存:1327
包装:100
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60V,310mA,1.6Ω,N沟道增强型场效应晶体管
库存:10188
包装:100
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¥0.6792 |
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¥0.4764 |
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ONSEMI
库存:4125
包装:5
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ONSEMI
库存:0
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ONSEMI
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ONSEMI
库存:0
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PSI
耐压:60V 电流:115mA 漏源电压(Vdss):60V 连续漏极电流(Id):115mA 功率(Pd):225mW 导通电阻(RDS(on)@Vgs,Id):1.4Ω@10V,0.5A
SHENZHEN JINGYANG
库存:1695
包装:20
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SLKOR
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TECH PUBLIC
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YANGJIE
N沟道 耐压:60V 电流:340mA 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):340mA 功率(Pd):350mW 导通电阻(RDS(on)@Vgs,Id):1.3Ω@10V,300mA 阈值电压(Vgs(th)@Id):2.5V@250uA
YFW
库存:0
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