AMSEM
库存:2656
包装:50
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50: |
¥0.1038 |
500: |
¥0.0839 |
3000: |
¥0.0727 |
6000: |
¥0.0658 |
24000: |
¥0.0597 |
51000: |
¥0.0562 |
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CHANGJIANG ELECTRONICS TECH (CJ)
库存:11279
包装:20
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20: |
¥0.1661 |
200: |
¥0.1358 |
600: |
¥0.1194 |
3000: |
¥0.1081 |
9000: |
¥0.0995 |
21000: |
¥0.0943 |
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DOWO
库存:5598
包装:50
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50: |
¥0.0904 |
500: |
¥0.0721 |
3000: |
¥0.0617 |
6000: |
¥0.0556 |
21000: |
¥0.0504 |
42000: |
¥0.0478 |
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ELECSUPER ELECTRONICS
库存:3402
包装:50
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50: |
¥0.0980 |
500: |
¥0.0806 |
3000: |
¥0.0702 |
6000: |
¥0.0650 |
24000: |
¥0.0598 |
51000: |
¥0.0572 |
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FOJAN
库存:1922
包装:50
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50: |
¥0.0742 |
500: |
¥0.0596 |
3000: |
¥0.0518 |
6000: |
¥0.0466 |
24000: |
¥0.0414 |
51000: |
¥0.0397 |
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FOSAN
库存:2460
包装:50
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50:
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¥0.0601
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500: |
¥0.0480 |
3000: |
¥0.0413 |
6000: |
¥0.0372 |
24000: |
¥0.0337 |
51000: |
¥0.0319 |
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FOSHAN BLUE ROCKET ELECTRONICS CO LTD
库存:2666
包装:50
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50: |
¥0.1105 |
500: |
¥0.0985 |
3000: |
¥0.0803 |
6000: |
¥0.0760 |
24000: |
¥0.0725 |
51000: |
¥0.0700 |
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GOODWORK SEMICONDUCTOR CO LTD
库存:2063
包装:50
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50: |
¥0.0883 |
500: |
¥0.0710 |
3000: |
¥0.0615 |
6000: |
¥0.0554 |
30000: |
¥0.0502 |
45000: |
¥0.0476 |
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GP
封装/外壳:SOD-123 齐纳电压Vz:24V 齐纳阻抗Zzt:70 Ohms 功率:350mW 反向漏电流Ir:100nA @ 16.8V
HXY MOSFET
这款SOD-123封装的高精度稳压二极管,具有出色的24V稳定电压(VZ)及超低反向电流IR仅0.04uA,在5mA IZT条件下表现卓越。其最大耗散功率为0.2W,确保在各类应用中实现高效能与低发热运行。适用于对电压稳定性要求极高的精密电路设计,是您理想的高端稳压解决方案。
HXY MOSFET
这款SOD-123封装的高精度稳压二极管,具有出色的24V稳定电压(VZ)及超低反向电流IR仅0.04uA,在5mA IZT条件下表现卓越。其最大耗散功率为0.2W,确保在各类应用中实现高效能与低发热运行。适用于对电压稳定性要求极高的精密电路设计,是您理想的高端稳压解决方案。
库存:4284
包装:50
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50: |
¥0.0850 |
500: |
¥0.0683 |
3000: |
¥0.0556 |
6000: |
¥0.0500 |
24000: |
¥0.0452 |
51000: |
¥0.0426 |
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LGE
库存:921
包装:50
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50: |
¥0.1287 |
500: |
¥0.1028 |
3000: |
¥0.0847 |
6000: |
¥0.0760 |
24000: |
¥0.0682 |
51000: |
¥0.0639 |
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MCC
封装/外壳:SOD-123 功率:500mW 齐纳电压Vz:24V 齐纳阻抗Zzt:70 Ohms 反向漏电流Ir:100nA @ 16.8V
MDD
封装/外壳:SOD-123 齐纳电压Vz:24V 齐纳阻抗Zzt:60 Ohms 功率:500mW 容差:±5%
MDD (MICRODIODE ELECTRONICS)
库存:32212
包装:50
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50: |
¥0.0998 |
500: |
¥0.0815 |
3000: |
¥0.0659 |
6000: |
¥0.0599 |
24000: |
¥0.0547 |
51000: |
¥0.0512 |
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MSKSEMI
封装/外壳:SOD-123 反向漏电流Ir:100nA @ 16.8V 功率:500mW 齐纳电压Vz:24V 齐纳阻抗Zzt:70 Ohms
MSKSEMI
库存:1485
包装:20
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20: |
¥0.1577 |
200: |
¥0.1265 |
600: |
¥0.1092 |
3000: |
¥0.0901 |
9000: |
¥0.0814 |
21000: |
¥0.0762 |
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SHENZHEN CITY XIANGYUNFEIWU TECHNOLOGY CO LTD
库存:1783
包装:50
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50: |
¥0.1372 |
500: |
¥0.1096 |
3000: |
¥0.0915 |
6000: |
¥0.0820 |
24000: |
¥0.0742 |
51000: |
¥0.0699 |
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SHIKUES SEMICONDUCTOR
库存:1622
包装:50
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50: |
¥0.1076 |
500: |
¥0.0861 |
3000: |
¥0.0741 |
6000: |
¥0.0663 |
24000: |
¥0.0603 |
51000: |
¥0.0568 |
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SLKOR
库存:421
包装:20
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20: |
¥0.1838 |
200: |
¥0.1476 |
600: |
¥0.1277 |
3000: |
¥0.1018 |
9000: |
¥0.0915 |
21000: |
¥0.0855 |
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SLKOR(萨科微)
库存:45
包装:1
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1: |
¥0.0920 |
100: |
¥0.0884 |
1000: |
¥0.0848 |
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SLKOR(萨科微)
库存:46
包装:1
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1: |
¥0.0923 |
100: |
¥0.0887 |
1000: |
¥0.0851 |
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SUNMATE
最大功率0.5W ; 精度 5% ;0.5W 24V
SUNMATE
最大功率0.5W ; 精度 5% ;0.5W 24V
SUNMATE
最大功率0.5W ; 精度 5% ;0.5W 24V
TWGMC
二极管配置:独立式 稳压值(标称值):24V 稳压值(范围):22.8V~25.6V 功率:500mW
TWGMC
二极管配置:独立式 稳压值(标称值):24V 稳压值(范围):22.8V~25.6V 功率:500mW
库存:7580
包装:50
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50: |
¥0.0795 |
500: |
¥0.0629 |
3000: |
¥0.0544 |
6000: |
¥0.0489 |
24000: |
¥0.0441 |
51000: |
¥0.0415 |
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TWGMC
库存:18552
包装:50
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50: |
¥0.0960 |
500: |
¥0.0761 |
3000: |
¥0.0657 |
6000: |
¥0.0597 |
24000: |
¥0.0536 |
51000: |
¥0.0502 |
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YONGYUTAI
封装/外壳:SOD-123 反向漏电流Ir:100nA @ 16.8V 功率:500mW 齐纳电压Vz:24V 齐纳阻抗Zzt:70 Ohms
晶导微电子
二极管配置:独立式 稳压值(标称值):24V 稳压值(范围):22.8V~25.6V 功率:500mW
晶导微电子
二极管配置:独立式 稳压值(标称值):24V 稳压值(范围):22.8V~25.6V 功率:500mW