AMSEM
库存:1998
包装:50
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50: |
¥0.0379 |
500: |
¥0.0371 |
3000: |
¥0.0362 |
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AMSEM
库存:1179
包装:50
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50: |
¥0.0390 |
500: |
¥0.0381 |
6000: |
¥0.0373 |
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晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):100@10mA,1V transistors,NPN 40V 200mA 200mW,SOT-23
库存:5409
包装:1
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540: |
¥0.1271 |
1500: |
¥0.0953 |
3000: |
¥0.0658 |
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晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):100@10mA,1V transistors,NPN 40V 200mA 200mW,SOT-23
CBI-ELECTRIC GROUP
库存:2654
包装:50
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50: |
¥0.0781 |
500: |
¥0.0625 |
3000: |
¥0.0538 |
6000: |
¥0.0486 |
24000: |
¥0.0442 |
51000: |
¥0.0416 |
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CJ
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):100@10mA,1V 1AM 100-300 NPN,Vceo=40V,Ic=0.2A,hfe=100~300,丝印1A
DIOTEC
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):350mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA 直流电流增益(hFE@Ic,Vce):100@10mA,1V 特征频率(fT):300MHz 工作温度:-55℃~+150℃@(Tj)
库存:25
包装:1
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1: |
¥0.1032 |
100: |
¥0.0919 |
1000: |
¥0.0857 |
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DOWO
库存:5436
包装:50
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50: |
¥0.0621 |
500: |
¥0.0500 |
3000: |
¥0.0431 |
6000: |
¥0.0396 |
24000: |
¥0.0362 |
51000: |
¥0.0336 |
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EIC SEMICONDUCTOR INC
库存:1293
包装:50
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50: |
¥0.1357 |
500: |
¥0.1089 |
3000: |
¥0.0951 |
6000: |
¥0.0864 |
24000: |
¥0.0786 |
51000: |
¥0.0743 |
|
ELECSUPER ELECTRONICS
库存:12455
包装:20
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20: |
¥0.0625 |
200: |
¥0.0521 |
600: |
¥0.0469 |
3000: |
¥0.0434 |
9000: |
¥0.0408 |
21000: |
¥0.0391 |
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FOJAN
库存:139226
包装:100
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100: |
¥0.0452 |
1000: |
¥0.0400 |
3000: |
¥0.0356 |
9000: |
¥0.0348 |
51000: |
¥0.0330 |
99000: |
¥0.0322 |
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FOSAN
库存:127281
包装:100
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100: |
¥0.0369 |
1000: |
¥0.0329 |
3000: |
¥0.0292 |
9000: |
¥0.0279 |
51000: |
¥0.0267 |
99000: |
¥0.0261 |
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FOSHAN BLUE ROCKET ELECTRONICS CO LTD
库存:33901
包装:50
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50: |
¥0.0718 |
500: |
¥0.0580 |
3000: |
¥0.0450 |
6000: |
¥0.0407 |
24000: |
¥0.0363 |
51000: |
¥0.0337 |
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FUXINSEMI
耐压:40V 电流:200mA NPN 晶体管类型:NPN 集电极电流(Ic):200mA 集射极击穿电压(Vceo):40V 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):300@10mA,1V
库存:75240
包装:100
|
100: |
¥0.0502 |
1000: |
¥0.0406 |
3000: |
¥0.0311 |
9000: |
¥0.0279 |
51000: |
¥0.0251 |
120000: |
¥0.0236 |
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FUXINSEMI
库存:85418
包装:100
|
100: |
¥0.0617 |
1000: |
¥0.0495 |
3000: |
¥0.0382 |
9000: |
¥0.0348 |
51000: |
¥0.0313 |
120000: |
¥0.0295 |
|
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):225mW 直流电流增益(hFE@Ic,Vce):100@10mA,1V
库存:1251
包装:1
|
1: |
¥0.0268 |
100: |
¥0.0249 |
1000: |
¥0.0230 |
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GOODWORK SEMICONDUCTOR CO LTD
库存:447483
包装:50
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50: |
¥0.0538 |
500: |
¥0.0434 |
3000: |
¥0.0313 |
6000: |
¥0.0278 |
30000: |
¥0.0260 |
45000: |
¥0.0252 |
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GP
封装/外壳:SOT-23 功率耗散Pd:350mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:40V 集电极连续电流:200mA
GUANGDONG KEXIN INDUSTRIAL CO LTD
库存:3186
包装:50
|
50: |
¥0.0709 |
500: |
¥0.0579 |
3000: |
¥0.0475 |
6000: |
¥0.0432 |
24000: |
¥0.0389 |
51000: |
¥0.0372 |
|
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):100@10mA,1V
库存:6776
包装:1
|
1:
|
¥0.0166
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100: |
¥0.0162 |
3000: |
¥0.0156 |
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HXY
库存:567992
包装:50
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50: |
¥0.0450 |
500: |
¥0.0381 |
3000: |
¥0.0286 |
6000: |
¥0.0268 |
24000: |
¥0.0251 |
51000: |
¥0.0242 |
|
HXY MOSFET
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA 直流电流增益(hFE@Ic,Vce):100@10mA,1V 特征频率(fT):300MHz 工作温度:+150℃@(Tj)
IDCHIP
库存:6525
包装:50
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50: |
¥0.0759 |
500: |
¥0.0613 |
3000: |
¥0.0500 |
6000: |
¥0.0449 |
24000: |
¥0.0405 |
51000: |
¥0.0388 |
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JCET
库存:2089
包装:1
|
1: |
¥0.0882 |
25: |
¥0.0760 |
100: |
¥0.0656 |
1000: |
¥0.0563 |
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JCET
库存:5262
包装:1
|
400: |
¥0.1695 |
1500: |
¥0.1059 |
3000: |
¥0.0877 |
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JIANGSU HIGH DIODE SEMICONDUCTOR CO LTD
库存:3634
包装:50
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50: |
¥0.1103 |
500: |
¥0.0903 |
3000: |
¥0.0686 |
6000: |
¥0.0617 |
24000: |
¥0.0556 |
51000: |
¥0.0530 |
|
封装/外壳:SOT-23 功率耗散Pd:200mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:40V 集电极连续电流:200mA
封装/外壳:SOT-23 功率耗散Pd:200mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:40V 集电极连续电流:200mA
JSMSEMI
专为中等电压、微至小电流应用环境设计,是您进行精密放大与开关电路的理想半导体器件。
库存:197823
包装:100
|
100: |
¥0.0443 |
1000: |
¥0.0361 |
3000: |
¥0.0285 |
9000: |
¥0.0258 |
45000: |
¥0.0234 |
90000: |
¥0.0221 |
|
JSMSEMI
专为中等电压、微至小电流应用环境设计,是您进行精密放大与开关电路的理想半导体器件。
JSMSEMI
库存:214070
包装:100
|
100: |
¥0.0543 |
1000: |
¥0.0440 |
3000: |
¥0.0345 |
9000: |
¥0.0319 |
45000: |
¥0.0293 |
90000: |
¥0.0276 |
|
JUXING ELECTRONICS
库存:17033
包装:50
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50: |
¥0.0681 |
500: |
¥0.0551 |
3000: |
¥0.0474 |
6000: |
¥0.0431 |
24000: |
¥0.0388 |
51000: |
¥0.0362 |
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LANGJIE
库存:2314
包装:50
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50: |
¥0.1049 |
500: |
¥0.0841 |
3000: |
¥0.0720 |
6000: |
¥0.0650 |
24000: |
¥0.0590 |
51000: |
¥0.0555 |
|
N/A
库存:296
包装:1
|
1: |
¥0.0218 |
2: |
¥0.0197 |
4: |
¥0.0183 |
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NEXPERIA
库存:14310
包装:560
|
560: |
¥0.1023 |
1000: |
¥0.0793 |
1500: |
¥0.0650 |
3000: |
¥0.0566 |
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ONSEMI
库存:0
包装:100
|
100: |
¥0.5078 |
250: |
¥0.4640 |
500: |
¥0.4587 |
1000: |
¥0.2347 |
5000: |
¥0.2133 |
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ONSEMI
库存:0
包装:5
|
5: |
¥1.4509 |
25: |
¥1.4189 |
100: |
¥0.5078 |
250: |
¥0.4641 |
500: |
¥0.4587 |
1000: |
¥0.2347 |
5000: |
¥0.2134 |
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ONSEMI
库存:0
包装:3000
|
3000: |
¥0.2348 |
9000: |
¥0.2081 |
|
PANJIT
二极管配置:1对串联式 功率:225mW 直流反向耐压(Vr):70V 平均整流电流(Io):200mA 正向压降(Vf):1.25V@150mA 反向恢复时间(trr):6ns
PJSEMI
库存:7721
包装:50
|
50: |
¥0.0894 |
500: |
¥0.0729 |
3000: |
¥0.0564 |
6000: |
¥0.0503 |
24000: |
¥0.0460 |
51000: |
¥0.0434 |
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SHENZHEN CITY XIANGYUNFEIWU TECHNOLOGY CO LTD
库存:140979
包装:50
|
50: |
¥0.0876 |
500: |
¥0.0763 |
3000: |
¥0.0651 |
6000: |
¥0.0607 |
24000: |
¥0.0581 |
51000: |
¥0.0564 |
|
SHENZHEN JINKAISHENG ELECTRONICS CO LTD
库存:928
包装:50
|
50: |
¥0.1029 |
500: |
¥0.0830 |
3000: |
¥0.0701 |
6000: |
¥0.0631 |
24000: |
¥0.0571 |
51000: |
¥0.0536 |
|
SHIKUES
库存:5559
包装:1
|
1: |
¥0.0292 |
100: |
¥0.0278 |
1000: |
¥0.0262 |
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SHIKUES SEMICONDUCTOR
库存:30724
包装:100
|
100: |
¥0.0587 |
1000: |
¥0.0475 |
3000: |
¥0.0371 |
9000: |
¥0.0337 |
51000: |
¥0.0302 |
99000: |
¥0.0285 |
|
SLKOR
库存:9421
包装:50
|
50: |
¥0.0660 |
500: |
¥0.0530 |
3000: |
¥0.0425 |
6000: |
¥0.0382 |
24000: |
¥0.0347 |
51000: |
¥0.0330 |
|
封装/外壳:SOT-23 功率耗散Pd:200mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:40V 集电极连续电流:200mA
TWGMC
库存:320050
包装:100
|
100: |
¥0.0596 |
1000: |
¥0.0493 |
3000: |
¥0.0389 |
9000: |
¥0.0354 |
51000: |
¥0.0328 |
99000: |
¥0.0311 |
|
UMW
封装/外壳:SOT-23 功率耗散Pd:150mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:40V 集电极连续电流:200mA
UMW
库存:7243
包装:50
|
50: |
¥0.0881 |
500: |
¥0.0691 |
3000: |
¥0.0544 |
6000: |
¥0.0475 |
24000: |
¥0.0423 |
51000: |
¥0.0397 |
|
VISHAY
库存:827
包装:1
|
1: |
¥0.1929 |
25: |
¥0.1663 |
100: |
¥0.1433 |
|
三极管 NPN Ic=1mA Vceo=40V hfe=30~300 P=350mW SOT23-3