MAGNACHIP
We are a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products for consumer, computing, communication, industrial, automotive and Internet of Things ("IoT") applications. We provide technology platforms for analog, mixed-signal, power, high voltage, non-volatile memory, and RF applications. We have a proven record of 30-year operating history, large portfolio of approximately 2,917 registered novel patents and 141 pending novel patent applications and extensive engineering and manufacturing process expertise.
商品列表
MPKB2CA100U40
供应商: RS
分类: 整流器和肖特基二极管
描述: MagnaChip 二极管 MPKB2CA100U40, Io=200A, Vrev=400V, 60ns, 3引脚 5DM-1封装
最大连续正向电流: 200A 二极管配置: 共阴极 每片芯片元件数目: 2 峰值反向重复电压: 400V 安装类型: 面板安装 封装类型: 5DM-1 二极管类型: 硅结型 二极管技术: 硅结型 引脚数目: 3 最大正向电压降: 1.3V 长度: 94mm 宽度: 27.5mm 高度: 22.5mm 峰值反向回复时间: 60ns 最低工作温度: -40 °C 尺寸: 94 x 27.5 x 22.5mm 最高工作温度: +150 °C 峰值反向电流: 1mA 峰值非重复正向浪涌电流: 2kA
供应商: RS
分类: 整流器和肖特基二极管
描述: MagnaChip 二极管 MPKB2CA100U40, Io=200A, Vrev=400V, 60ns, 3引脚 5DM-1封装
最大连续正向电流: 200A 二极管配置: 共阴极 每片芯片元件数目: 2 峰值反向重复电压: 400V 安装类型: 面板安装 封装类型: 5DM-1 二极管类型: 硅结型 二极管技术: 硅结型 引脚数目: 3 最大正向电压降: 1.3V 长度: 94mm 宽度: 27.5mm 高度: 22.5mm 峰值反向回复时间: 60ns 最低工作温度: -40 °C 尺寸: 94 x 27.5 x 22.5mm 最高工作温度: +150 °C 峰值反向电流: 1mA 峰值非重复正向浪涌电流: 2kA
MDD5N50RH
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=500 V, 4.4 A, 3引脚 DPAK (TO-252)封装
通道类型: N 最大连续漏极电流: 4.4 A 最大漏源电压: 500 V 封装类型: DPAK (TO-252) 安装类型: 表面贴装 引脚数目: 3 最大漏源电阻值: 1.4 Ω 通道模式: 增强 最大栅阈值电压: 5V 最大功率耗散: 70 W 晶体管配置: 单 最大栅源电压: -30 V、+30 V 每片芯片元件数目: 1 长度: 6.73mm 典型栅极电荷@Vgs: 12.2 nC @ 10 V 高度: 2.39mm 宽度: 6.22mm 晶体管材料: Si 最高工作温度: +150 °C 正向二极管电压: 1.4V 最低工作温度: -55 °C
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=500 V, 4.4 A, 3引脚 DPAK (TO-252)封装
通道类型: N 最大连续漏极电流: 4.4 A 最大漏源电压: 500 V 封装类型: DPAK (TO-252) 安装类型: 表面贴装 引脚数目: 3 最大漏源电阻值: 1.4 Ω 通道模式: 增强 最大栅阈值电压: 5V 最大功率耗散: 70 W 晶体管配置: 单 最大栅源电压: -30 V、+30 V 每片芯片元件数目: 1 长度: 6.73mm 典型栅极电荷@Vgs: 12.2 nC @ 10 V 高度: 2.39mm 宽度: 6.22mm 晶体管材料: Si 最高工作温度: +150 °C 正向二极管电压: 1.4V 最低工作温度: -55 °C
MDD2N60RH
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=600 V, 1.9 A, 3引脚 DPAK (TO-252)封装
通道类型: N 最大连续漏极电流: 1.9 A 最大漏源电压: 600 V 封装类型: DPAK (TO-252) 安装类型: 表面贴装 引脚数目: 3 最大漏源电阻值: 4.5 Ω 通道模式: 增强 最大栅阈值电压: 5V 最大功率耗散: 42 W 晶体管配置: 单 最大栅源电压: -30 V、+30 V 每片芯片元件数目: 1 晶体管材料: Si 宽度: 6.22mm 高度: 2.39mm 典型栅极电荷@Vgs: 6.7 nC @ 10 V 最高工作温度: +150 °C 正向二极管电压: 1.4V 最低工作温度: -55 °C 长度: 6.73mm
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=600 V, 1.9 A, 3引脚 DPAK (TO-252)封装
通道类型: N 最大连续漏极电流: 1.9 A 最大漏源电压: 600 V 封装类型: DPAK (TO-252) 安装类型: 表面贴装 引脚数目: 3 最大漏源电阻值: 4.5 Ω 通道模式: 增强 最大栅阈值电压: 5V 最大功率耗散: 42 W 晶体管配置: 单 最大栅源电压: -30 V、+30 V 每片芯片元件数目: 1 晶体管材料: Si 宽度: 6.22mm 高度: 2.39mm 典型栅极电荷@Vgs: 6.7 nC @ 10 V 最高工作温度: +150 °C 正向二极管电压: 1.4V 最低工作温度: -55 °C 长度: 6.73mm
MDU1514URH
供应商: RS
分类: MOSFET
描述: MagnaChip NMOS, MOSFET, Vds=30 V, PowerDFN56封装, 66 A, 表面贴装, 8引脚, Si晶体管
通道类型: N 最大连续漏极电流: 66 A 最大漏源电压: 30 V 封装类型: PowerDFN56 安装类型: 表面贴装 引脚数目: 8 最大漏源电阻值: 9 mΩ 通道模式: 增强 最大栅阈值电压: 2.7V 最大功率耗散: 46.2 W 晶体管配置: 单 最大栅源电压: -20 V、+20 V 每片芯片元件数目: 1 最低工作温度: -55 °C 正向二极管电压: 1.1V 最高工作温度: +150 °C 宽度: 5.1mm 长度: 6.1mm 典型栅极电荷@Vgs: 19 nC @ 10 V 高度: 1.1mm 晶体管材料: Si
供应商: RS
分类: MOSFET
描述: MagnaChip NMOS, MOSFET, Vds=30 V, PowerDFN56封装, 66 A, 表面贴装, 8引脚, Si晶体管
通道类型: N 最大连续漏极电流: 66 A 最大漏源电压: 30 V 封装类型: PowerDFN56 安装类型: 表面贴装 引脚数目: 8 最大漏源电阻值: 9 mΩ 通道模式: 增强 最大栅阈值电压: 2.7V 最大功率耗散: 46.2 W 晶体管配置: 单 最大栅源电压: -20 V、+20 V 每片芯片元件数目: 1 最低工作温度: -55 °C 正向二极管电压: 1.1V 最高工作温度: +150 °C 宽度: 5.1mm 长度: 6.1mm 典型栅极电荷@Vgs: 19 nC @ 10 V 高度: 1.1mm 晶体管材料: Si
MDS1524URH
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=30 V, 19 A, 8引脚 SOIC封装
通道类型: N 最大连续漏极电流: 19 A 最大漏源电压: 30 V 封装类型: SOIC 安装类型: 表面贴装 引脚数目: 8 最大漏源电阻值: 11.7 mΩ 通道模式: 增强 最大栅阈值电压: 2.7V 最大功率耗散: 5.3 W 晶体管配置: 单 最大栅源电压: -20 V、+20 V 每片芯片元件数目: 1 晶体管材料: Si 最低工作温度: -55 °C 正向二极管电压: 1.1V 宽度: 3.9mm 高度: 1.5mm 典型栅极电荷@Vgs: 16.2 nC @ 10 V 长度: 4.9mm 最高工作温度: +150 °C
供应商: RS
分类: MOSFET
描述: MagnaChip MOSFET, N沟道, Si, Vds=30 V, 19 A, 8引脚 SOIC封装
通道类型: N 最大连续漏极电流: 19 A 最大漏源电压: 30 V 封装类型: SOIC 安装类型: 表面贴装 引脚数目: 8 最大漏源电阻值: 11.7 mΩ 通道模式: 增强 最大栅阈值电压: 2.7V 最大功率耗散: 5.3 W 晶体管配置: 单 最大栅源电压: -20 V、+20 V 每片芯片元件数目: 1 晶体管材料: Si 最低工作温度: -55 °C 正向二极管电压: 1.1V 宽度: 3.9mm 高度: 1.5mm 典型栅极电荷@Vgs: 16.2 nC @ 10 V 长度: 4.9mm 最高工作温度: +150 °C
MMD60R580PBRH
供应商: Arrow Electronics
TypicalTurn-OnDelayTime(ns): 14 Configuration: Single HTS: 8541.29.00.95 MaximumContinuousDrainCurrent(A): 8 TypicalTurn-OffDelayTime(ns): 48 ECCN(US): EAR99 PartStatus: Active PPAP: Unknown MaximumOperatingTemperature(°C): 150 Automotive: Unknown PCBchanged: 2 MaximumDrainSourceResistance(mOhm): 580@10V TypicalGateCharge@10V(nC): 18 PackageLength: 6.73(Max) ChannelMode: Enhancement MaximumPowerDissipation(mW): 70000 TypicalFallTime(ns): 25 NumberofElementsperChip: 1 MaximumGateSourceVoltage(V): ±30 MaximumDrainSourceVoltage(V): 600 Mounting: Surface Mount SupplierPackage: DPAK PackageHeight: 2.39(Max) TypicalRiseTime(ns): 34 Tab: Tab PackageWidth: 6.1 TypicalInputCapacitance@Vds(pF): 575@25V ProductCategory: Power MOSFET Packaging: Tape and Reel TypicalGateCharge@Vgs(nC): 18@10V MinimumOperatingTemperature(°C): -55 ChannelType: N PinCount: 3
供应商: Arrow Electronics
TypicalTurn-OnDelayTime(ns): 14 Configuration: Single HTS: 8541.29.00.95 MaximumContinuousDrainCurrent(A): 8 TypicalTurn-OffDelayTime(ns): 48 ECCN(US): EAR99 PartStatus: Active PPAP: Unknown MaximumOperatingTemperature(°C): 150 Automotive: Unknown PCBchanged: 2 MaximumDrainSourceResistance(mOhm): 580@10V TypicalGateCharge@10V(nC): 18 PackageLength: 6.73(Max) ChannelMode: Enhancement MaximumPowerDissipation(mW): 70000 TypicalFallTime(ns): 25 NumberofElementsperChip: 1 MaximumGateSourceVoltage(V): ±30 MaximumDrainSourceVoltage(V): 600 Mounting: Surface Mount SupplierPackage: DPAK PackageHeight: 2.39(Max) TypicalRiseTime(ns): 34 Tab: Tab PackageWidth: 6.1 TypicalInputCapacitance@Vds(pF): 575@25V ProductCategory: Power MOSFET Packaging: Tape and Reel TypicalGateCharge@Vgs(nC): 18@10V MinimumOperatingTemperature(°C): -55 ChannelType: N PinCount: 3
MPKC2CA200U60
供应商: Arrow Electronics
分类: Rectifier
描述: Diode Switching 600V 400A 3-Pin Case 5DM-2
EU RoHS: Compliant Type: Switching Diode Configuration: Dual Common Cathode Peak Reverse Repetitive Voltage (V): 600 Maximum Continuous Forward Current (A): 400 Peak Non-Repetitive Surge Current (A): 33000 Peak Forward Voltage (V): 1.8@200A Peak Reverse Current (uA): 1000 Peak Reverse Recovery Time (ns): 140 Maximum Power Dissipation (mW): 540000 Minimum Operating Temperature (°C): -40 Maximum Operating Temperature (°C): 150 Operating Junction Temperature (°C): -40 to 150 Mounting: Screw Package Height (mm): 29.75(Max) Package Length (mm): 93 Package Width (mm): 35 PCB changed: 3 Standard Package Name: Case 5DM-2 Supplier Package: Case 5DM-2 Pin Count: 3
供应商: Arrow Electronics
分类: Rectifier
描述: Diode Switching 600V 400A 3-Pin Case 5DM-2
EU RoHS: Compliant Type: Switching Diode Configuration: Dual Common Cathode Peak Reverse Repetitive Voltage (V): 600 Maximum Continuous Forward Current (A): 400 Peak Non-Repetitive Surge Current (A): 33000 Peak Forward Voltage (V): 1.8@200A Peak Reverse Current (uA): 1000 Peak Reverse Recovery Time (ns): 140 Maximum Power Dissipation (mW): 540000 Minimum Operating Temperature (°C): -40 Maximum Operating Temperature (°C): 150 Operating Junction Temperature (°C): -40 to 150 Mounting: Screw Package Height (mm): 29.75(Max) Package Length (mm): 93 Package Width (mm): 35 PCB changed: 3 Standard Package Name: Case 5DM-2 Supplier Package: Case 5DM-2 Pin Count: 3
MDP1932TH
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH Si 80V 175A 3-Pin(3+Tab) TO-220 Tube
EU RoHS: Compliant Product Category: Power MOSFET Technology: TMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 80 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 175 Maximum Gate Threshold Voltage (V): 4 Maximum Drain Source Resistance (mOhm): 3.4@10V Typical Gate Charge @ Vgs (nC): 105@10V Typical Gate Charge @ 10V (nC): 105 Typical Input Capacitance @ Vds (pF): 7200@40V Maximum Power Dissipation (mW): 209000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tube Temperature Grade: Military Mounting: Through Hole Package Height (mm): 9.65(Max) Package Length (mm): 10.67(Max) Package Width (mm): 4.83(Max) PCB changed: 3 Tab: Tab Standard Package Name: TO-220 Supplier Package: TO-220 Pin Count: 3
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH Si 80V 175A 3-Pin(3+Tab) TO-220 Tube
EU RoHS: Compliant Product Category: Power MOSFET Technology: TMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 80 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 175 Maximum Gate Threshold Voltage (V): 4 Maximum Drain Source Resistance (mOhm): 3.4@10V Typical Gate Charge @ Vgs (nC): 105@10V Typical Gate Charge @ 10V (nC): 105 Typical Input Capacitance @ Vds (pF): 7200@40V Maximum Power Dissipation (mW): 209000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tube Temperature Grade: Military Mounting: Through Hole Package Height (mm): 9.65(Max) Package Length (mm): 10.67(Max) Package Width (mm): 4.83(Max) PCB changed: 3 Tab: Tab Standard Package Name: TO-220 Supplier Package: TO-220 Pin Count: 3
MDS5951URH
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH 60V 4.5A 8-Pin SOIC T/R
EU RoHS: Compliant Product Category: Power MOSFET Technology: TMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 4.5 Maximum Gate Threshold Voltage (V): 3 Maximum Drain Source Resistance (mOhm): 50@10V Typical Gate Charge @ Vgs (nC): 9@10V|4.4@4.5V Typical Gate Charge @ 10V (nC): 9 Typical Input Capacitance @ Vds (pF): 420@30V Maximum Power Dissipation (mW): 2000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Temperature Grade: Military Mounting: Surface Mount Package Height (mm): 1.5(Max) Package Length (mm): 4.9 Package Width (mm): 3.9 PCB changed: 8 Standard Package Name: SOP Supplier Package: SOIC Pin Count: 8 Lead Shape: Gull-wing
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH 60V 4.5A 8-Pin SOIC T/R
EU RoHS: Compliant Product Category: Power MOSFET Technology: TMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 4.5 Maximum Gate Threshold Voltage (V): 3 Maximum Drain Source Resistance (mOhm): 50@10V Typical Gate Charge @ Vgs (nC): 9@10V|4.4@4.5V Typical Gate Charge @ 10V (nC): 9 Typical Input Capacitance @ Vds (pF): 420@30V Maximum Power Dissipation (mW): 2000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Temperature Grade: Military Mounting: Surface Mount Package Height (mm): 1.5(Max) Package Length (mm): 4.9 Package Width (mm): 3.9 PCB changed: 8 Standard Package Name: SOP Supplier Package: SOIC Pin Count: 8 Lead Shape: Gull-wing
MDQ16N50GTP
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-247 Tube
EU RoHS: Compliant Product Category: Power MOSFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 500 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 16.5 Maximum Gate Threshold Voltage (V): 5 Maximum Drain Source Resistance (mOhm): 350@10V Typical Gate Charge @ Vgs (nC): 34.9@10V Typical Gate Charge @ 10V (nC): 34.9 Typical Input Capacitance @ Vds (pF): 1724@25V Maximum Power Dissipation (mW): 215000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tube Temperature Grade: Military Mounting: Through Hole Package Height (mm): 21.46(Max) Package Length (mm): 16.26(Max) Package Width (mm): 5.31(Max) PCB changed: 3 Tab: Tab Standard Package Name: TO-247 Supplier Package: TO-247 Pin Count: 3 Lead Shape: Through Hole
供应商: Arrow Electronics
分类: MOSFET
描述: Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-247 Tube
EU RoHS: Compliant Product Category: Power MOSFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 500 Maximum Gate Source Voltage (V): ±30 Maximum Continuous Drain Current (A): 16.5 Maximum Gate Threshold Voltage (V): 5 Maximum Drain Source Resistance (mOhm): 350@10V Typical Gate Charge @ Vgs (nC): 34.9@10V Typical Gate Charge @ 10V (nC): 34.9 Typical Input Capacitance @ Vds (pF): 1724@25V Maximum Power Dissipation (mW): 215000 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tube Temperature Grade: Military Mounting: Through Hole Package Height (mm): 21.46(Max) Package Length (mm): 16.26(Max) Package Width (mm): 5.31(Max) PCB changed: 3 Tab: Tab Standard Package Name: TO-247 Supplier Package: TO-247 Pin Count: 3 Lead Shape: Through Hole