物料参数

Product Lifecycle:	不推荐用于新设计
Package:	14-Lead PDIP,14-Lead CerDIP,16-Lead SOIC Wide,LCC:CER LEADLESS CHIP CARR,CHIPS OR DIE
# of Amps:	4
GBP (typ):	500kHz
BW -3 dB (typ):	500kHz
Slew Rate (typ):	150mV/us
Vos (typ):	40µV
Vos (max):	150µV
Vos TC (typ):	600nV/°C
VNoise Density (typ):	11nV/rtHz
Current Noise Density (typ):	600fA/rtHz
0.1 to 10 Hz VNoise (typ):	500nV p-p
Ibias (typ):	900pA
Ibias (max):	3nA
Ios (typ):	100pA
Ios (max):	1nA
Iq/Amp (typ):	600µA
Iq/Amp (max):	775µA
Vs span (min):	6V
Vs span (max):	40V
CMRR (typ):	140dB
CMRR (min):	120dB
Input Architecture:	Bipolar
In V+ Headroom (typ):	2V
In V+ Headroom (max):	3V
In V- Headroom (typ):	2V
In V- Headroom (max):	3V
Out V+ Headroom (max):	3V
Out V+ Headroom (typ):	2.4V
Out V- Headroom (typ):	2.4V
Out V- Headroom (max):	3V
Aol (typ):	126dB
Min Stable Gain:	1V/V
Shutdown:	No
Amp Features:	Op Amp
Over-the-Top:	No
Ccm (typ):	3.2pF
Cdiff (typ):	11.5pF
Open Loop Rout:	50Ohms
Feedback Type:	Voltage
Package Area:	111.825mm² (16-Lead SOIC Wide) (OP400GSZ)mm²
Export Classification:	EAR99
Automotive:	No
Reliability Level:	883,DIE
Temp Range:	-55 to 125°C
Package Finish Code:	E3, NA, PB
Package Height:	2.65mm (16-Lead SOIC Wide) (OP400GSZ)mm
Launch Date:	2007-01-17
Terminal Finish:	E3, NA, PB
Temp Range Code:	NA
EP:	No

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