CHT-PLA8543C-TO257-T
品牌
供应商
分类
Mosfets
描述
NEPTUNE Series 1200 V 10 A High Temp Silicon Carbide Mosfet - TO-257
物料参数
| Drain-to-Source Voltage [Vdss]: | 1200 V |
| Drain-Source On Resistance-Max: | 90 mΩ |
| Qg Gate Charge: | 90 nC |
| Rated Power Dissipation: | 30 W |