IPB042N10N3G
品牌
供应商
分类
Power>>MOSFET (Si/SiC)>>N-Channel Power MOSFET
物料参数
| I[Dpuls] max: | 400.0A |
| R[th]: | 0.7K/W |
| P[tot] max: | 214.0W |
| V[DS] max: | 100.0V |
| Q[G](typ @10V): | 88.0nC |
| Package: | D2PAK (TO-263) |
| Polarity: | N |
| C[iss]: | 6320.0pF |
| C[oss]: | 1210.0pF |
| R[DS (on)](@10V) max: | 4.2mΩ |
| I[D ](@25°C) max: | 137.0A |
| V[GS(th)]: | 2.7V |
| Operating Temperature max: | 175.0°C |
| Budgetary Price €/1k: | 0.75 |