IXTY08N100D2
品牌
供应商
分类
分立半导体产品>>晶体管 - FET，MOSFET - 单个
描述
MOSFET N-CH 1000V 800MA TO252
物料参数
| Vgs(th)(Max)@Id: | - |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| FETFeature: | Depletion Mode |
| DriveVoltage(MaxRdsOn,MinRdsOn): | - |
| GateCharge(Qg)(Max)@Vgs: | 14.6 nC @ 5 V |
| SupplierDevicePackage: | TO-252AA |
| BaseProductNumber: | IXTY08 |
| Technology: | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C: | 800mA (Tc) |
| Vgs(Max): | ±20V |
| Mfr: | IXYS |
| CaliforniaProp65: | |
| PowerDissipation(Max): | 60W (Tc) |
| RoHSStatus: | ROHS3 Compliant |
| DraintoSourceVoltage(Vdss): | 1000 V |
| OperatingTemperature: | -55°C ~ 150°C (TJ) |
| ProductStatus: | Active |
| RdsOn(Max)@Id,Vgs: | 21Ohm @ 400mA, 0V |
| Package/Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
| ECCN: | EAR99 |
| REACHStatus: | REACH Unaffected |
| MountingType: | Surface Mount |
| InputCapacitance(Ciss)(Max)@Vds: | 325 pF @ 25 V |
| Series: | Depletion |
| FETType: | N-Channel |
| Package: | Tube |
| HTSUS: | 8541.29.0095 |