GS61004B-E01-TY
品牌
GAN SYSTEMS
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 100V Enhancement Mode Transistor
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | GaNSystems |
| Technology: | GaN |
| MountingStyle: | SMD/SMT |
| Package/Case: | GaNPX-3 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 100V |
| Id-ContinuousDrainCurrent: | 45A |
| RdsOn-Drain-SourceResistance: | 15mOhms |
| Vgsth-Gate-SourceThresholdVoltage: | 1.1V |
| Vgs-Gate-SourceVoltage: | 7V |
| Qg-GateCharge: | 6.2nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| ChannelMode: | Enhancement |
| Packaging: | Tray |
| Brand: | GaNSystems |
| FallTime: | - |
| ForwardTransconductance-Min: | - |
| Height: | 0.52mm |
| Length: | 4.55mm |
| MoistureSensitive: | Yes |
| Pd-PowerDissipation: | - |
| Product: | MOSFET |
| RiseTime: | - |
| Series: | GS61004 |
| FactoryPackQuantity: | 100 |
| TransistorType: | 1N-Channel |
| Type: | GaNTransistor |
| TypicalTurn-OffDelayTime: | - |
| TypicalTurn-OnDelayTime: | - |
| Width: | 4.35mm |