2N2609
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>JFET
描述
JFET JFET P-Channel -30V 50mA 300mW 2mW
物料参数
| Vgs-Gate-SourceBreakdownVoltage: | -30V |
| ForwardTransconductance-Min: | 25mS |
| Configuration: | Single |
| FactoryPackQuantity: | 1 |
| Vds-Drain-SourceBreakdownVoltage: | -10V |
| ProductType: | JFETs |
| Package/Case: | TO-18-3 |
| TransistorPolarity: | P-Channel |
| RoHS: | RoHS Compliant |
| Pd-PowerDissipation: | 300mW |
| Brand: | InterFET |
| Series: | 2N26 |
| MountingStyle: | ThroughHole |
| Type: | JFET |
| UnitWeight: | 0.042461oz |
| Id-ContinuousDrainCurrent: | 5mA |
| Technology: | Si |
| Subcategory: | Transistors |
| Drain-SourceCurrentatVgs=0: | -10mA |
| Manufacturer: | InterFET |
| ProductCategory: | JFET |
| Packaging: | Bulk |
| Gate-SourceCutoffVoltage: | 4V |