MAGX-001214-650L00
品牌
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>RF Transis
描述
RF JFET Transistors L-Band Gain 18.8dB Pout 650 Watts Peak
物料参数
| ProductCategory: | RFJFETTransistors |
| Manufacturer: | MACOM |
| TransistorType: | HEMT |
| Technology: | GaNSiC |
| Gain: | 19.7dB |
| Vds-Drain-SourceBreakdownVoltage: | 50V |
| Vgs-Gate-SourceBreakdownVoltage: | -8V |
| Id-ContinuousDrainCurrent: | 22.4A |
| OutputPower: | 650W |
| MaximumOperatingTemperature: | +95C |
| Pd-PowerDissipation: | 700W |
| MountingStyle: | SMD/SMT |
| Packaging: | Tray |
| Brand: | MACOM |
| Configuration: | Single |
| DevelopmentKit: | MAGX-L21214-650L00 |
| ForwardTransconductance-Min: | 16.2S |
| MinimumOperatingTemperature: | -40C |
| OperatingFrequency: | 1400MHz |
| OperatingTemperatureRange: | -40Cto+95C |
| Product: | RFPowerTransistor |
| FactoryPackQuantity: | 10 |
| Type: | GaNSiCHEMT |
| Vgsth-Gate-SourceThresholdVoltage: | -2.9V |