GS66502B-E01-MR
品牌
GAN SYSTEMS
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 650V Enhancement Mode Transistor
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | GaNSystems |
| Technology: | GaN |
| MountingStyle: | SMD/SMT |
| Package/Case: | GaNPX-3 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 650V |
| Id-ContinuousDrainCurrent: | 7.5A |
| RdsOn-Drain-SourceResistance: | 560mOhms |
| Vgsth-Gate-SourceThresholdVoltage: | 1.6V |
| Vgs-Gate-SourceVoltage: | 10V |
| Qg-GateCharge: | 1.7nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| ChannelMode: | Enhancement |
| Packaging: | Reel |
| Packaging: | MouseReel |
| Packaging: | CutTape |
| Brand: | GaNSystems |
| Height: | 0.51mm |
| Length: | 6.56mm |
| MoistureSensitive: | Yes |
| Product: | MOSFET |
| Series: | GS66502 |
| FactoryPackQuantity: | 250 |
| Width: | 5.01mm |