GS66508B-E01-MR
品牌
GAN SYSTEMS
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 650V 30A E-Mode GaN
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | GaNSystems |
| Technology: | GaN |
| MountingStyle: | SMD/SMT |
| Package/Case: | GaNPX-4 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 650V |
| Id-ContinuousDrainCurrent: | 30A |
| RdsOn-Drain-SourceResistance: | 50mOhms |
| Vgsth-Gate-SourceThresholdVoltage: | 1.1V |
| Vgs-Gate-SourceVoltage: | 7V |
| Qg-GateCharge: | 5.8nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| ChannelMode: | Enhancement |
| Packaging: | CutTape |
| Packaging: | MouseReel |
| Packaging: | Reel |
| Brand: | GaNSystems |
| FallTime: | 5.2ns |
| Height: | 0.48mm |
| Length: | 8.38mm |
| MoistureSensitive: | Yes |
| Pd-PowerDissipation: | - |
| RiseTime: | 3.7ns |
| Series: | GS66508 |
| FactoryPackQuantity: | 250 |
| TransistorType: | 1N-Channel |
| TypicalTurn-OffDelayTime: | 4.1ns |
| TypicalTurn-OnDelayTime: | 8ns |
| Width: | 6.98mm |