IRF6795MTR1PBF
品牌
INTERNATIONAL
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | Infineon |
| Technology: | Si |
| MountingStyle: | SMD/SMT |
| Package/Case: | DirectFET-MX |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 25V |
| Id-ContinuousDrainCurrent: | 160A |
| RdsOn-Drain-SourceResistance: | 3.2mOhms |
| Vgs-Gate-SourceVoltage: | 20V |
| Vgsth-Gate-SourceThresholdVoltage: | 1.35Vto2.35V |
| Qg-GateCharge: | 35nC |
| MinimumOperatingTemperature: | -40C |
| MaximumOperatingTemperature: | +150C |
| Packaging: | Reel |
| ChannelMode: | Enhancement |
| Brand: | Infineon/IR |
| Configuration: | SingleDualDrainDualSource |
| FallTime: | 11ns |
| ForwardTransconductance-Min: | 100S |
| Height: | 0.7mm |
| Length: | 6.35mm |
| Pd-PowerDissipation: | 75W |
| RiseTime: | 27ns |
| FactoryPackQuantity: | 1000 |
| TransistorType: | 1N-Channel |
| Type: | DirectFETPowerMOSFET |
| TypicalTurn-OffDelayTime: | 16ns |
| TypicalTurn-OnDelayTime: | 16ns |
| Width: | 5.05mm |