EPC2019
品牌
供应商
分类
分立半导体产品>>晶体管 - FET，MOSFET - 单个
描述
GANFET N-CH 200V 8.5A DIE
物料参数
| Vgs(th)(Max)@Id: | 2.5V @ 1.5mA |
| Category: | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
| FETFeature: | - |
| DriveVoltage(MaxRdsOn,MinRdsOn): | 5V |
| GateCharge(Qg)(Max)@Vgs: | 2.9 nC @ 5 V |
| SupplierDevicePackage: | Die |
| BaseProductNumber: | EPC20 |
| Technology: | GaNFET (Gallium Nitride) |
| Current-ContinuousDrain(Id)@25°C: | 8.5A (Ta) |
| Vgs(Max): | +6V, -4V |
| Mfr: | EPC |
| PowerDissipation(Max): | - |
| RoHSStatus: | ROHS3 Compliant |
| DraintoSourceVoltage(Vdss): | 200 V |
| OperatingTemperature: | -40°C ~ 150°C (TJ) |
| ProductStatus: | Active |
| RdsOn(Max)@Id,Vgs: | 42mOhm @ 7A, 5V |
| Package/Case: | Die |
| MoistureSensitivityLevel(MSL): | 1 (Unlimited) |
| ECCN: | EAR99 |
| REACHStatus: | REACH Unaffected |
| MountingType: | Surface Mount |
| InputCapacitance(Ciss)(Max)@Vds: | 288 pF @ 100 V |
| Series: | eGaN® |
| FETType: | N-Channel |
| Package: | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| HTSUS: | 8541.29.0040 |