GS66516T-E02-TY
品牌
GAN SYSTEMS
供应商
分类
Semiconductors>>Discrete Semiconductors>>Transistors>>MOSFET
描述
MOSFET 650V 60A E-Mode GaN Preproduction Units
物料参数
| ProductCategory: | MOSFET |
| Manufacturer: | GaNSystems |
| Technology: | GaN |
| MountingStyle: | SMD/SMT |
| Package/Case: | GaNPX-4 |
| NumberofChannels: | 1Channel |
| TransistorPolarity: | N-Channel |
| Vds-Drain-SourceBreakdownVoltage: | 650V |
| Id-ContinuousDrainCurrent: | 60A |
| RdsOn-Drain-SourceResistance: | 27mOhms |
| Vgsth-Gate-SourceThresholdVoltage: | 1.6V |
| Vgs-Gate-SourceVoltage: | 10V |
| Qg-GateCharge: | 13nC |
| MinimumOperatingTemperature: | -55C |
| MaximumOperatingTemperature: | +150C |
| Configuration: | Single |
| ChannelMode: | Enhancement |
| Packaging: | Tray |
| Brand: | GaNSystems |
| Height: | 0.54mm |
| Length: | 9mm |
| MoistureSensitive: | Yes |
| Product: | MOSFET |
| FactoryPackQuantity: | 200 |
| Width: | 7.64mm |