AMSEM
库存:2712
包装:50
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50: |
¥0.0686 |
500: |
¥0.0668 |
3000: |
¥0.0660 |
6000: |
¥0.0651 |
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ANBON
二极管配置:独立式 稳压值(标称值):6.2V 稳压值(范围):5.8V~6.6V 功率:500mW
ANBON
二极管配置:独立式 稳压值(标称值):6.2V 稳压值(范围):5.8V~6.6V 功率:500mW
ANBON SEMI
库存:110
包装:20
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20: |
¥0.1615 |
200: |
¥0.1330 |
600: |
¥0.1174 |
3000: |
¥0.0924 |
9000: |
¥0.0846 |
21000: |
¥0.0803 |
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集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V ransistors,NPN 180V 600mA 300mW HFE=100~300,SOT-23
库存:4541
包装:1
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310: |
¥0.2214 |
1500: |
¥0.1384 |
3000: |
¥0.1145 |
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集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V ransistors,NPN 180V 600mA 300mW HFE=100~300,SOT-23
集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V ransistors,NPN 180V 600mA 300mW HFE=100~300,SOT-23
CBI-ELECTRIC GROUP
库存:146659
包装:50
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50: |
¥0.0919 |
500: |
¥0.0746 |
3000: |
¥0.0555 |
6000: |
¥0.0494 |
24000: |
¥0.0451 |
51000: |
¥0.0425 |
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CJ
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):200@10mA,5V G1 H档200-300 NPN,Vceo=160V,Ic=600mA,hfe=200~300
DIOTEC
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):250mW 直流电流增益(hFE@Ic,Vce):80@10mA,5V
ELECSUPER ELECTRONICS
库存:47247
包装:20
|
20: |
¥0.1095 |
200: |
¥0.0836 |
600: |
¥0.0698 |
3000: |
¥0.0612 |
9000: |
¥0.0534 |
21000: |
¥0.0500 |
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FOJAN
库存:30042
包装:50
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50: |
¥0.0781 |
500: |
¥0.0624 |
3000: |
¥0.0546 |
6000: |
¥0.0486 |
24000: |
¥0.0451 |
51000: |
¥0.0425 |
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FOSAN
库存:27655
包装:50
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50: |
¥0.0629 |
500: |
¥0.0505 |
3000: |
¥0.0436 |
6000: |
¥0.0394 |
24000: |
¥0.0358 |
51000: |
¥0.0339 |
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FOSHAN BLUE ROCKET ELECTRONICS CO LTD
库存:3007
包装:50
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50: |
¥0.1181 |
500: |
¥0.0955 |
3000: |
¥0.0782 |
6000: |
¥0.0703 |
24000: |
¥0.0643 |
51000: |
¥0.0599 |
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FUXINSEMI
耐压:160V 电流:600mA NPN (L档) 晶体管类型:NPN 集电极电流(Ic):600mA 集射极击穿电压(Vceo):160V 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V (L档)
库存:36172
包装:50
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50: |
¥0.0682 |
500: |
¥0.0553 |
3000: |
¥0.0435 |
6000: |
¥0.0392 |
24000: |
¥0.0355 |
51000: |
¥0.0334 |
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FUXINSEMI
库存:41152
包装:50
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50: |
¥0.0833 |
500: |
¥0.0677 |
3000: |
¥0.0538 |
6000: |
¥0.0477 |
24000: |
¥0.0434 |
51000: |
¥0.0408 |
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晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V
库存:3979
包装:3000
|
1: |
¥0.0410 |
100: |
¥0.0379 |
1000: |
¥0.0352 |
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晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V
库存:3857
包装:1
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1:
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¥0.0408
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100: |
¥0.0377 |
1000: |
¥0.0350 |
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GOODWORK SEMICONDUCTOR CO LTD
库存:258523
包装:50
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50: |
¥0.0953 |
500: |
¥0.0788 |
3000: |
¥0.0563 |
6000: |
¥0.0511 |
30000: |
¥0.0459 |
45000: |
¥0.0433 |
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GUANGDONG KEXIN INDUSTRIAL CO LTD
库存:19
包装:20
|
20: |
¥0.1778 |
200: |
¥0.1440 |
600: |
¥0.1258 |
3000: |
¥0.1032 |
9000: |
¥0.0937 |
21000: |
¥0.0885 |
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HXY MOSFET
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 集电极截止电流(Icbo):50nA 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):200mV@50mA,5mA 直流电流增益(hFE@Ic,Vce):200@10mA,5V 特征频率(fT):100MHz 工作温度:+150℃@(Tj)
IDCHIP
库存:2848
包装:20
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20: |
¥0.0634 |
200: |
¥0.0556 |
600: |
¥0.0512 |
3000: |
¥0.0443 |
9000: |
¥0.0426 |
21000: |
¥0.0408 |
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JIANGSU HIGH DIODE SEMICONDUCTOR CO LTD
库存:3004
包装:50
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50: |
¥0.1535 |
500: |
¥0.1242 |
3000: |
¥0.0992 |
6000: |
¥0.0897 |
24000: |
¥0.0811 |
51000: |
¥0.0768 |
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封装/外壳:SOT-23 功率耗散Pd:300mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:160V 集电极连续电流:600mA
JSCJ
封装/外壳:SOT-23 功率耗散Pd:300mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:160V 集电极连续电流:600mA
JSMSEMI
适用于高压、中等电流环境下的线性放大与开关电路设计,是电子设备和工业控制的理想半导体器件。
JSMSEMI
适用于高压、中等电流环境下的线性放大与开关电路设计,是电子设备和工业控制的理想半导体器件。
库存:485070
包装:50
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50: |
¥0.0505 |
500: |
¥0.0402 |
3000: |
¥0.0337 |
6000: |
¥0.0303 |
24000: |
¥0.0273 |
45000: |
¥0.0257 |
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JSMSEMI
适用于高压、中等电流环境下的线性放大与开关电路设计,是电子设备和工业控制的理想半导体器件。
JSMSEMI
库存:150067
包装:50
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50: |
¥0.0608 |
500: |
¥0.0486 |
3000: |
¥0.0399 |
6000: |
¥0.0356 |
24000: |
¥0.0330 |
45000: |
¥0.0313 |
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LANGJIE
库存:2798
包装:50
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50: |
¥0.1050 |
500: |
¥0.0842 |
3000: |
¥0.0720 |
6000: |
¥0.0651 |
24000: |
¥0.0590 |
51000: |
¥0.0555 |
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LGE
库存:2881
包装:20
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20: |
¥0.1606 |
200: |
¥0.1286 |
600: |
¥0.1114 |
3000: |
¥0.0889 |
9000: |
¥0.0794 |
21000: |
¥0.0751 |
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晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V (100-200) NPN
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V (100-200) NPN
MDD (MICRODIODE ELECTRONICS)
库存:50325
包装:50
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50: |
¥0.0944 |
500: |
¥0.0762 |
3000: |
¥0.0589 |
6000: |
¥0.0528 |
24000: |
¥0.0468 |
51000: |
¥0.0442 |
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ON SEMICONDUCTOR
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
ON SEMICONDUCTOR
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
库存:121791
包装:1
|
1: |
¥0.1038 |
500: |
¥0.1029 |
1000: |
¥0.0936 |
3000: |
¥0.0851 |
9000: |
¥0.0808 |
15000: |
¥0.0766 |
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ONSEMI
库存:0
包装:100
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100: |
¥0.6873 |
250: |
¥0.6337 |
500: |
¥0.6284 |
1000: |
¥0.3308 |
5000: |
¥0.2644 |
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ONSEMI
库存:0
包装:5
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5: |
¥1.7126 |
25: |
¥1.6805 |
100: |
¥0.6872 |
250: |
¥0.6337 |
500: |
¥0.6283 |
1000: |
¥0.3308 |
5000: |
¥0.2644 |
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PJSEMI
库存:1051
包装:50
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50: |
¥0.1234 |
500: |
¥0.0992 |
3000: |
¥0.0837 |
6000: |
¥0.0751 |
24000: |
¥0.0682 |
51000: |
¥0.0647 |
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SHENZHEN JINKAISHENG ELECTRONICS CO LTD
库存:661
包装:50
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50: |
¥0.1309 |
500: |
¥0.1040 |
3000: |
¥0.0893 |
6000: |
¥0.0806 |
24000: |
¥0.0728 |
51000: |
¥0.0685 |
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SHIKUES SEMICONDUCTOR
库存:1176
包装:50
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50: |
¥0.0945 |
500: |
¥0.0763 |
3000: |
¥0.0633 |
6000: |
¥0.0572 |
24000: |
¥0.0520 |
51000: |
¥0.0494 |
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SLKOR
库存:14986
包装:50
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50: |
¥0.0901 |
500: |
¥0.0719 |
3000: |
¥0.0598 |
6000: |
¥0.0537 |
24000: |
¥0.0485 |
51000: |
¥0.0459 |
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ST
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):350mW 直流电流增益(hFE@Ic,Vce):80@10mA,5V NPN
库存:9
包装:1
|
1: |
¥0.1215 |
2: |
¥0.1118 |
4: |
¥0.1026 |
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封装/外壳:SOT-23 功率耗散Pd:300mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:160V 集电极连续电流:600mA
TWGMC
库存:109293
包装:50
|
50: |
¥0.1054 |
500: |
¥0.0855 |
3000: |
¥0.0674 |
6000: |
¥0.0613 |
24000: |
¥0.0553 |
51000: |
¥0.0527 |
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SOT-23 塑封晶体管 NPN 160V 600mA
SOT-23 塑封晶体管 NPN 160V 600mA
SOT-23 塑封晶体管 NPN 160V 600mA
UMW
库存:16891
包装:50
|
50: |
¥0.1200 |
500: |
¥0.0958 |
3000: |
¥0.0717 |
6000: |
¥0.0639 |
24000: |
¥0.0561 |
51000: |
¥0.0527 |
|
WEI PAN MICROELECTRONICS
库存:7448
包装:50
|
50: |
¥0.1003 |
500: |
¥0.0813 |
3000: |
¥0.0657 |
6000: |
¥0.0596 |
24000: |
¥0.0536 |
51000: |
¥0.0510 |
|
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V NPN 160V 600mA
晶体管类型:NPN 集射极击穿电压(Vceo):160V 集电极电流(Ic):600mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):100@10mA,5V NPN 160V 600mA
封装/外壳:SOT-23 功率耗散Pd:300mW 晶体管类型:NPN 集电极-发射极最大电压VCEO:160V 集电极连续电流:600mA
晶导微电子
二极管配置:独立式 稳压值(标称值):6.2V 稳压值(范围):5.8V~6.6V 功率:500mW